RoHS
YJL03N06A
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
60V
3.0A
<100 mohm
<120 mohm
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
Applications
● DC-DC Converters
● Power management functions
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
60
V
Gate-source Voltage
VGS
±20
V
TA=25℃
Drain Current
3
ID
TA=70℃
Unit
A
2.4
Pulsed Drain Current A
IDM
12
A
Total Power Dissipation @ TC=25℃
PD
1.2
W
RθJA
105
℃/ W
TJ ,TSTG
-55~+150
℃
Thermal Resistance Junction-to-Ambient
B
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJL03N06A
F2
S10.
3000
30000
120000
7“ reel
1/6
S-S1967
Rev.2.1,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL03N06A
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
60
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
1
μA
IGSS1
VGS= ±20V, VDS=0V
±100
nA
IGSS2
VGS= ±10V, VDS=0V
±50
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1.3
2.0
V
VGS= 10V, ID=3A
86
100
Static Drain-Source On-Resistance
RDS(ON)
VGS= 4.5V, ID=2A
92
120
IS=3.0A,VGS=0V
0.8
1.2
V
3.0
A
Static Parameter
V
Gate-Body Leakage Current
Diode Forward Voltage
mΩ
VSD
Maximum Body-Diode Continuous Current
1.0
IS
Dynamic Parameters
Input Capacitance
Ciss
330
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
17
Total Gate Charge
Qg
5.1
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.7
Turn-on Delay Time
tD(on)
13
Turn-on Rise Time
tr
VDS=30V,VGS=0V,f=1MHZ
90
pF
Switching Parameters
VGS=10V,VDS=30V,ID=3.0A
1.3
51
VGS=10V,VDD=30V, ID=1.5A,RL=1Ω
RGEN=3Ω
Turn-off Delay Time
Turn-off fall Time
A.
B.
nC
ns
tD(off)
19
tf
12
Pulse Test: Pulse Width≤300us,Duty cycle ≤2%.
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
2/6
S-S1967
Rev.2.1,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL03N06A
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
3/6
S-S1967
Rev.2.1,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL03N06A
Figure7. Safe Operation Area
Figure8. Switching wave
4/6
S-S1967
Rev.2.1,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL03N06A
■ SOT-23 Package information
■ SOT-23 Suggested Pad Layout
5/6
S-S1967
Rev.2.1,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJL03N06A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
6/6
S-S1967
Rev.2.1,25-Dec-18
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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