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MMBT2907AGH

MMBT2907AGH

  • 厂商:

    ZOWIE(智威)

  • 封装:

  • 描述:

    MMBT2907AGH - General Purpose Transistor PNP Silicon - Zowie Technology Corporation

  • 数据手册
  • 价格&库存
MMBT2907AGH 数据手册
Z owie Technology Corporation General Purpose Transistor PNP Silicon Halogen-free type Lead free product 3 COLLECTOR 3 BASE 1 2 MMBT2907AGH 1 SOT-23 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA=25 C o Derate above 25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature (2) o Symbol PD R JA TA=25 C o Max. 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW / oC o C/W PD R JA TJ,TSTG mW mW / oC o C/W o C ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Characteristic Symbol Min. Max. Unit o OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage(3) ( IC= -1.0mAdc, IB=0 ) Collector-Base Breakdowe Voltage ( IC= -10uAdc, IE=0 ) Emitter - Base Breakdowe Voltage ( IE= -10 uAdc, IC=0 ) Collector Cutoff Current ( VCE= -30 Vdc, VBE (off)= -0.5 Vdc ) Collector Cutoff Current ( VCB= -50 Vdc, IE=0 ) o ( VCB= -50 Vdc, IE=0, TA=125 C ) Base Cutoff Current ( VCE=60 V, VEB (off)=3.0 Vdc ) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width 300 uS, Duty Cycle V(BR)CEO V(BR)CBO V(BR)EBO ICEX -60 -60 -5.0 - -50 Vdc Vdc Vdc nAdc ICBO - -0.010 -10 -50 uAdc IB nAdc 2.0%. REV. 0 Zowie Technology Corporation Z owie Technology Corporation MMBT2907AGH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Characteristic Symbol Min. Max. Unit o ON CHARACTERISTICS DC Current Gain ( IC= -0.1 mAdc, VCE= -10 Vdc ) ( IC= -1.0 mAdc, VCE= -10 Vdc ) ( IC= -10 mAdc, VCE= -10 Vdc ) (3) ( IC= -150 mAdc, VCE= -10 Vdc ) (3) ( IC= -500 mAdc, VCE= -10 Vdc ) Collector-Emitter Saturation Voltage ( IC= -150 mAdc, IB= -15 mAdc ) ( IC= -500 mAdc, IB= -50 mAdc ) Base-Emitter Saturation Voltage ( IC= -150 mAdc, IB= -15 mAdc ) ( IC= -500 mAdc, IB= -50 mAdc ) (3) (3) HFE 75 100 100 100 50 300 - - VCE(sat) - -0.4 -1.6 Vdc VBE(sat) - -1.3 -2.6 Vdc SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC= -50 mAdc, VCE= -20 Vdc, f=100 MHZ ) Output Capacitance ( VCB= -10 Vdc, IE=0, f=1.0 MHZ ) Input Capacitance ( VEB= -2.0 Vdc, IC=0, f=1.0 MHZ ) (3),(4) fT 200 - MHZ Cobo - 8.0 pF Cibo - 30 pF SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-On Time Storage Time Fall Time (3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%. (4) fT is defined as the frequency at which hfe extrapolates to unity. Figure 1. Delay and Rise Time Test Circuit INPUT ZO = 50 PRF = 150PPS RISE TIME 2.0nS P.W. < 200nS 1.0 k 0 -16V 50 -30 V 200 ( VCC= -30 Vdc, IC= -150 mAdc, IB1= -15 mAdc ) ton td tr toff ts tf - 45 10 40 100 80 30 nS nS ( VCC= -6.0 Vdc, IC= -150 mAdc, IB1=IB2= -15 mAdc ) Figure 2. Storage and Fall Time Test Circuit INPUT ZO = 50 PRF = 150PPS RISE TIME 2.0nS P.W. < 200nS 1.0 k 0 -30 V +15 V -6.0V 1.0 k 37 TO OSCILLOSCOPE RISE TIME 5.0nS TO OSCILLOSCOPE RISE TIME 5.0nS 1N916 50 200 ns 200 ns REV. 0 Zowie Technology Corporation Zowie Technology Corporation Figure 3. DC Current Gain TYPICAL CHARACTERISTICS 3.0 MMBT2907AGH hFE, NORMALIZED CURRETN GAIN 2.0 TJ = 125 C o o VCE= -10 V TJ = 25 C 1.0 0.7 0.5 TJ = -55 C o 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT ( mA ) Figure 4. Collector Saturation Region VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = 1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IB, BASE CURRENT ( mA ) Figure 5. Turn - On Time 300 200 tr VCC= -30 V IC/IB= 10 o TJ= 25 C Figure 6. Turn - Off Time 500 300 200 100 tf VCC = -30 V IC/IB = 10 IB1 = IB2 o TJ = 25 C 100 70 t,TIME ( nS ) t,TIME ( nS ) 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 td @ VBE(off) = 0V 70 50 t'S = tS - 1/8 tf 30 20 2.0 V 10 7.0 5.0 -200 -300 -500 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT ( mA ) REV. 0 Zowie Technology Corporation
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