PJM3401PSA

PJM3401PSA P-Enhancement Field Effect Transistor Features SOT-23  High density cell design for ultra low RDS(ON)  Fully characterized avalanche voltage and current  Excellent package for good heat dissipation 1. Gate 2.Source 3.Drain Marking: R1 Applications Schematic Diagram  Power switching application  Hard switched and high frequency circuits  Uninterruptible power supply Drain 3 1 Gate 2 Source Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Value 30 Units Drain-Source Voltage Symbol -VDS Gate-Source Voltage VGS ±12 V Continuous Drain Current -ID 4.1 A Power Dissipation PD 1.2 W TJ, TSTG 150, -55 to 150 °C Symbol Typ. Units RθJA 104 °C/W Junction and Storage Temperature Range V Thermal Characteristics Parameter Maximum Junction-to-Ambient www.pingjingsemi.com Revision：2.0 Aug-2018 1/6 PJM3401PSA P-Enhancement Field Effect Transistor Electrical Characteristics (TA=25℃ unless otherwise specified) Symbol Test Condition Min. Typ. Max. Units Drain-source breakdown voltage -V(BR)DSS VGS = 0V, ID=-250µA 30 -- -- V Drain to Source Leakage Current -IDSS VDS =-24V,VGS = 0V -- -- 1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V -- -- ±100 nA Gate threshold voltage Note1 -VGS(th) 0.7 -- 1.3 V Drain-source on-resistance Note1 RDS(on) VGS =-10V, ID =-4.1A -- -- 65 mΩ VGS =-4.5V, ID =-2A -- -- 85 mΩ Forward transconductance Note1 gFS VDS =-5V, ID =-5A 7 -- -- S -- 954 -- -- 115 -- Parameter Static Characteristics VDS =VGS, ID =-250µA Dynamic characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 77 -- td(on) -- -- 6.3 -- -- 3.2 -- -- 38.2 -- -- 12 -- -- 1 VDS = -15V,VGS = 0V,f=1MHz pF Switching Characteristics Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) VDD=-15V, VGS=-10V，RGEN =6Ω, RL =3.6Ω, tf ns Source-Drain Diode characteristics Diode Forward voltage -VDS VGS =0V, IS=-1A V Notes: 1. Pulse test ; pulse width ≤300μs, duty cycle ≤2%. www.pingjingsemi.com Revision：2.0 Aug-2018 2/6 PJM3401PSA P-Enhancement Field Effect Transistor Typical Curves Output Characteristics -25 Ta=25℃ Ta=25℃ VGS=-10V Pulsed Pulsed VGS=-4.5V -4 (A) VGS=-3.0V -15 -3 -10 Drain Current ID ID (A) -20 Drain Current Transfer Characteristics -5 VGS=-2.5V -2 -1 -5 VGS=-2.0V -0 -1 -0 -2 -3 Drain to Source Voltage VDS RDS(ON) —— 180 -4 -0 -0.5 -5 (V) -1.0 -1.5 -2.0 Gate to Source Voltage ID RDS(ON) —— 180 VGS -2.5 VGS Ta=25℃ Ta=25℃ Pulsed Pulsed (mΩ) 150 VGS=-2.5V RDS(ON) 120 90 On-Resistance On-Resistance RDS(ON) (mΩ) 150 VGS=-4.5V 60 VGS=-10V 30 0 -3.0 (V) 120 90 ID=-2A 60 30 -0 -4 -2 Drain Current IS -10 -6 ID —— 0 -8 -0 -2 -4 -6 Gate to Source Voltage (A) VGS -8 (V) -10 Threshold Voltage VSD -1.2 Ta=25℃ Pulsed -1 (V) ID=-250uA VTH -0.01 Threshold Voltage Source Current IS (A) -1.0 -0.1 -1E-3 -0.8 -0.6 -1E-4 -1E-5 -0.0 -0.2 -0.4 -0.6 -0.8 Source to Drain Voltage VSD www.pingjingsemi.com Revision：2.0 Aug-2018 -1.0 (V) -1.2 -0.4 25 50 75 Junction Temperature 100 Tj 125 (℃) 3/6 PJM3401PSA P-Enhancement Field Effect Transistor Package Outline SOT-23（TO-236) 0.8 Max. 1.025 1.150 A1 0.000 0.050 0.100 b c D 0.300 0.080 2.800 0.400 0.115 2.900 0.500 0.150 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 0.300 0o θ 0.8 1.9 SOT-23 (TO-236) 0.550REF L1 L 2.2 Typ. 0.900 1.0 Min. A 1.0 Dimensions in millimeter Symbol 0.500 8o Recommended Soldering Pad Ordering Information Device PJM3401PSA www.pingjingsemi.com Revision：2.0 Aug-2018 Package SOT-23 Shipping 3000/Reel&Tape(7inch) 4/6 PJM3401PSA P-Enhancement Field Effect Transistor Conditions of Soldering and Storage Recommended condition of reflow soldering  Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：2.0 Aug-2018 5/6 PJM3401PSA P-Enhancement Field Effect Transistor Package Specifications 1.The method of packaging and dimension are shown as below figure. (Units:mm) Cover Tape SOT-23 (TO-236) 3,000 pcs per reel 1 3 2 Carrier Tape 30,000 pcs per box 10 reels per box 240 217 0 455 21 43 5 120,000 pcs per carton 4 boxes per carton 220 2.. Tape and reel data (Units:mm) D A T2 T1 4.0 4.0 B 8.0 C E 1Pin G N Tape (8mm) F Reel (7'') www.pingjingsemi.com Revision：2.0 Aug-2018 Symbol A B C E F D T1 T2 N G Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 3.15±0.1 1.25±0.1 6/6