2N3904

2N3903 / 2N3904 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary types the PNP transistors 2N3905 and 2N3906 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 09/08/2016 Rev:02 2N3903 / 2N3904 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 50 mA at VCE = 1 V, IC = 100 mA Symbol Min. Max. Unit hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 20 40 35 70 50 100 30 60 15 30 150 300 - - ICBO - 50 nA 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA IEBO - 50 nA V(BR)CBO 60 - V V(BR)CEO 40 - V V(BR)EBO 6 - V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VCE(sat) VCE(sat) - 0.2 0.3 V Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA VBE(sat) VBE(sat) - 0.85 0.95 V fT 250 300 - MHz Cob - 4 pF td - 35 ns tr - 35 ns ts - 200 ns tf - 50 ns Gain Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz 2N3903 2N3904 Collector Base Capacitance at VCB = 5 V, f = 100 KHz Delay Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA Rise Time at VCC = 3 V, VBE = 0.5 V, IC = 10 mA, IB1 = 1 mA Storage Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA Fall Time at VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA SEMTECH ELECTRONICS LTD. ® Dated : 09/08/2016 Rev:02 2N3903 / 2N3904 DC Current Gain 2 VCE=1V TJ=125°C 25°C hFE (Normalized) 1 0.7 -55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 30 200 50 70 100 IC (mA) Collector Saturation Region 1 TJ=25°C 30mA 0.8 IC=1mA 100mA VCE ( V ) 0.6 0.4 10mA 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IB (mA) f = 100 KHz SEMTECH ELECTRONICS LTD. ® Dated : 09/08/2016 Rev:02