WSD3070DN

WSD3070DN N-Ch MOSFET General Description Product Summery The WSD3070DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 25V 2.5mΩ 70A Applications The WSD3070DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3.3X3.3 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 70 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 55 A 1 20 A 1 16 A 200 A Avalanche Energy ,Single Pulse (L=0.5mH) 100 mJ pulse(L=0.5mH)3 ID@TA=25℃ ID@TA=70℃ IDM@TC=25℃ EAS IAS PD@TC=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Avalanche Current ,Single 20 A 4 62.5 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 1.78 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 70 ℃/W --- 2.5 ℃/W Dec.2014 WSD3070DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 25 --- --- V Reference to 25℃ , ID=1mA --- 0.028 V/℃ VGS=4.5V , ID=20A --- 2.5 --3.4 VGS=2.5V , ID=20A --- 3.0 4.0 0.5 0.8 1.1 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=40A --- 74 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.85 1.1 Ω Qg Total Gate Charge (4.5V) --- 96 134 Qgs Gate-Source Charge --- 5.5 7.7 Qgd Gate-Drain Charge --- 16 22 --- 16.6 31 Td(on) Tr Td(off) Tf VDS=15V, VGS=10V, IDS=20A Turn-On Delay Time Rise Time VDD=15V, RL=15Ω , --- 12.2 24 Turn-Off Delay Time IDS=1A, VGEN=10V, --- 135 244 Fall Time RG=6Ω --- 48 87 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz uA nC ns --- 4920 --- --- 510 --- --- 350 --- Min. Typ. Max. Unit pF Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=40A , dI/dt=100A/µs , TJ=25℃ --- --- 20 A --- --- 70 A --- --- 1.1 V --- 14.8 --- nS --- 3.9 --- nC Note d：Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. Note e：Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WSD3070DN N-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 70 60 60 50 ID - Drain Current (A) Ptot - Power (W) 50 40 30 20 40 30 20 10 10 o 0 o TC=25 C 0 20 40 60 0 80 100 120 140 160 TC=25 C,VG=10V 0 20 Tj - Junction Temperature (°C) 60 80 100 120 140 160 Tj - Junction Temperature (°C) Thermal Transient Impedance Safe Operation Area Rd s( o n) L im 100 1ms 10 DC o 10ms TC=25 C 1 0.01 0.1 1 10 Normalized Transient Thermal Resistance 3 it 500 ID - Drain Current (A) 40 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E-4 100 300 Single Pulse o 1E-5 1E-6 VDS - Drain - Source Voltage (V) www.winsok.tw 1 RθJC :2 C/W 1E-5 1E-4 1E-3 0.01 0.1 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WSD3070DN N-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics 150 Drain-Source On Resistance 6 VGS=3,4,5,6,7,8,9,10V 2V 5 RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 125 100 75 50 25 1.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 4 V GS=2.5V 3 VGS=4.5V 2 1 0 3.0 0 30 60 90 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 IDS=250 µA Normalized T hreshold Voltage RDS(ON) - On Resistance (mΩ) IDS=20A 12 9 6 3 0 1 2 3 4 5 6 7 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 8 VGS - Gate - Source Voltage (V) www.winsok.tw 150 VDS - Drain-Source Voltage (V) 15 0 120 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSD3070DN N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 2.5 VGS =4.5V 100 2.0 IS - Source Current (A) Normalized On Resistance IDS =20A 1.5 1.0 o Tj=150 C 10 o Tj=25 C 1 0.5 o 0.0 -50 -25 RON@Tj=25 C: 2.5mΩ 0 25 50 75 0.1 0.0 100 125 150 0.6 0.8 1.0 VSD - Source - Drain Voltage (V) Capacitance Gate Charge V DS=15V 9 I =20A DS VGS - Gate - source Voltage (V) 5000 1.2 10 Frequency=1MHz 6250 C - Capacitance (pF) 0.4 Tj - Junction Temperature (°C) 7500 Ciss 3750 2500 1250 Coss 0 0.2 8 7 6 5 4 3 2 1 Crss 0 5 10 15 20 25 0 0 30 VDS - Drain - Source Voltage (V) www.winsok.tw 20 40 60 80 100 QG - Gate Charge (nC) Page 5 Dec.2014 WSD3070DN N-Ch MOSFET DFN3.3x3.3 www.winsok.tw Page 6 Dec.2014 WSD3070DN N-Ch MOSFET Classification Profile www.winsok.tw Page 7 Dec.2014 WSD3070DN N-Ch MOSFET Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness