WSD1614DN

WSD1614DN N-Ch MOSFET Description Product Summery The WSD1614DN uses advanced trench technology to provide excellent RDS(ON), low gate charge BVDSS RDSON ID 20V 230mΩ 1.4A and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery Application protection or in other Switching application. Battery protection Load switch DFN1.0X0.6-3L Pin Configuration Features High power and current handing capability Lead free product is acquired Surface mount package ESD:1.5KV Absolute Maximum Ratings @TA=25℃ unless otherwise noted Symbol Parameter Ratin Unit VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V TA=25°C 1.4 A TA=70°C 1.1 A 3 A 0.55 W -55~150 ℃ Max Unit 180 °C/W ID Drain Current (Continuous) *AC IDM Drain Current (Pulse) *B PD Power Dissipation TJ/TSTG TC=25°C Operating Temperature/ Storage Temperature Thermal Resistance Ratings Symbol RthJA Parameter Maximum Junction-to-Ambient www.winsok.tw Steady-State Page 1 Rev1.0 Jan.2021 WSD1614DN N-Ch MOSFET Electrical Characteristics @TA=25℃ unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID= 250μA 20 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V -- -- 1 μA Gate Threshold Voltage VGS = VDS, IDS= 250μA 0.4 -- 1 V Gate Leakage Current VGS= 　8V, VDS=0V -- -- 　10 μA VGS = 4.5V, ID = 0.55A -- -- 230 mΩ VGS = 2.5V, ID = 0.45A -- -- 305 mΩ VGS = 1.8V, ID = 0.35A -- -- 455 mΩ Diode Forward Voltage ISD= 0.35A , VGS=0V -- -- 1.2 V IS Diode Forward Current *AC TA =25°C -- -- 0.58 A Qg Total Gate Charge -- 2 -- nC Qgs Gate-Source Charge -- 0.3 -- nC Qgd Gate-Drain Charge -- 0.3 -- nC td ( on ) Turn-on Delay Time -- 1.2 -- ns tr Turn-on Rise Time -- 25 -- ns td( off ) Turn-off Delay Time -- 14 -- ns -- 15 -- ns -- 43 -- pF -- 9 -- pF -- 6 -- pF VGS(TH) IGSS RDS(on) VSD Drain-Source On-state Resistance tf Turn-Off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=4.5V, VDS=10V, ID=1A VGS=4.5V, VDS=10V, RG=6　, ID=2A VDS=10V, VGS=0V, f=1.0MHz Note: A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. www.winsok.tw Page 2 Rev1.0 Jan.2021 WSD1614DN N-Ch MOSFET Typical Performance Characteristics（(TJ = 25 °C, unless otherwise noted)） www.winsok.tw Page 2 Rev1.0 Jan.2021 WSD1614DN N-Ch MOSFET www.winsok.tw Page 2 Rev1.0 Jan.2021 Package Information DFN1.0*0.6-3L www.winsok.tw Page 2 Rev1.0 Jan.2021 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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