WSK250N03

WSK250N03 N-Ch MOSFET Product Summery General Description The WSK250N03 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 1.8mΩ 250A Applications The WSK250N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System TO-263-2L Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ±20 V 1 250 A 1 A Continuous Drain Current, VGS @ 10V ID@TC=100℃ Continuous Drain Current, VGS @ 10V 180 IDM Pulsed Drain Current2 1000 A 3 EAS Single Pulse Avalanche Energy 600 mJ IAS Avalanche Current PD@TC=25℃ 200 A 3 200 W 3 Total Power Dissipation PD@TC=100℃ Total Power Dissipation 120 W TSTG Storage Temperature Range -55 to 170 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ www.winsok.tw Page 1 Dec.2014 WSK250N03 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. 30 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=20A --- 1.8 2.5 mΩ VGS=4.5V , ID=10A --- 2.5 3.5 mΩ 1 1.8 3 V --- -6.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 2 ±100 nA S VGS=0V , ID=250uA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- gfs Forward Transconductance VDS=5V , ID=20A 28 --- --- --- 232 --- --- 26 --- Gate-Drain Charge --- 59 --- Turn-On Delay Time --- 50 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Td(on) Tr Td(off) Tf Unit VDS=50V , VGS=10V , ID=120A uA nC Rise Time VDD=30V , VGS=10V , --- 111 --- Turn-Off Delay Time RG=6Ω ID=145A , --- 88 --- Fall Time RL=30Ω --- 74 --- --- 10600 --- --- 1156 --- --- 732 --- Min. Typ. Max. Unit --- --- 250 A --- --- 300 A --- --- 1.2 V Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=30V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=20A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSK250N03 N-Ch MOSFET Typical Characteristics www.winsok.tw Page 3 Dec.2014 WSK250N03 N-Ch MOSFET www.winsok.tw Page 4 Dec.2014 WSK250N03 N-Ch MOSFET www.winsok.tw Page 5 Dec.2014 WSK250N03 N-Ch MOSFET  Package Information TO-263-2L www.winsok.tw Page 3 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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