WSK140N03

WSK140N03 N-Ch MOSFET Product Summery General Description The WSK140N03 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 30V RDSON ID 4mΩ 140A Applications The WSK140N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Advanced high cell density Trench technology z Super Low Gate Charge TO-263-2L Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ±20 V 1 140 A 1 A Continuous Drain Current, VGS @ 10V ID@TC=100℃ Continuous Drain Current, VGS @ 10V 72 IDM Pulsed Drain Current2 225 A 3 EAS Single Pulse Avalanche Energy 145 mJ IAS Avalanche Current 53.8 A 3 86.8 W 3 Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TC=25℃ PD@TA=25℃ www.winsok.tw Total Power Dissipation Page 1 Rev1.0.Jun.2019 WSK140N03 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. 30 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=12A --- --- 4 mΩ VGS=4.5V , ID=12A --- --- 6 mΩ 1 --- 2.5 V --- -6.57 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 2 --- ±100 nA S VGS=0V , ID=250uA VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- gfs Forward Transconductance VDS=5V , ID=30A --- 26.5 --- --- 31.6 --- --- 6.1 --- Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 13.8 --- Turn-On Delay Time --- 11.2 --- Td(on) Unit VDS=20V , VGS=4.5V , ID=12A uA nC Rise Time VDD=15V,VGS=10V, --- 49 --- Turn-Off Delay Time RG=1.5Ω, ID=20A. --- 35 --- Fall Time --- 7.8 --- Ciss Input Capacitance --- 3075 --- Coss Output Capacitance --- 400 --- Crss Reverse Transfer Capacitance --- 315 --- Min. Typ. Max. Unit --- --- 110 A --- --- 225 A --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev1.0.Jun.2019 WSK140N03 N-Ch MOSFET Typical Characteristics 12 5.0 VGS=7V 8 4.5 VGS=5V RDSON (mΩ) ID Drain Current (A) ID=12A VGS=10V 10 VGS=4.5V 6 VGS=3V 4 4.0 2 0 3.5 0 0.25 0.5 VDS , Drain-to-Source Voltage (V) 0.75 2 Fig.1 Typical Output Characteristics 8 10 10 ID= 1 2 A VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 8 6 4 2 0 0 VSD , Source-to-Drain Voltage (V) 20 40 60 QG , T o t a l G a t e C h a Fig.3 Forward Characteristics of Reverse 80 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 6 VGS (V) Fig.2 On-Resistance vs. G-S Voltage 12 IS Source Current(A) 4 1.5 1 1.0 0.5 0.5 0 -50 25 100 TJ ,Junction Temperature (℃ ) -50 175 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 25 100 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Rev1.0.Jun.2019 WSK140N03 N-Ch MOSFET 10000 1000.00 F=1.0MHz 10us Capacitance (pF) Ciss 100.00 100us 10.00 10ms 100ms DC 1000 ID (A) Coss Crss 1.00 100 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM TON T 0.02 D = TON/T 0.01 0.01 0.00001 TJpeak = TC + PDM x RθJC SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.11 Unclamped Inductive Switching Waveform Page 4 Rev1.0.Jun.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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