AO9435

HMP9435 LOW VOLTAGE MOSFET (P-CHANNEL) FEATURES Ultra low on-resistance:VDS=-30V,ID=-5.1A,RDS(ON)≤85mΩ@VGS=-10V Ultra low gate charge For load switch or in PWM applications Surface Mount device     SOP-8 MECHANICAL DATA  Case: SOP-8  Case Material: Molded Plastic. UL flammability  Classification Rating: 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Weight: 0.3 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol VDS VGS ID IDM PD RθJA TJ TSTG Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current Power dissipation Thermal resistance from Junction to ambient Junction temperature Storage temperature Value -30 ±20 -5.1 -8 -20 2.5 50 150 -55 ~+150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Off Characteristics Drain-Source breakdown voltage Zero gate voltage drain current Gate-body leakage current On Characteristics Gate-threshold voltage VGS(th)* Drain-source on-resistance RDS(ON)* Forward transconductance Drain-Source Diode Characteristics Diode forward voltage Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Switching Characteristics Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time V(BR)DSS IDSS IGSS gFS* -1 4 -1 ±100 46 70 7 VSD V μA nA V V A A W °C/W °C °C Conditions VGS=0V, ID=-250μA VDS=-24V, VGS=0V VDS=0V, VGS=±20V -3 53 85 V mΩ mΩ S -1.2 V IS=-1.7A, VGS=0V VDS=-15V, VGS=0V, f=1MHz Ciss Coss Crss 1040 420 150 pF pF pF Qg Qgs Qgd td(on) tr td(off) tf 12 2.2 3 15 13 58 21 nC nC nC nS nS nS nS *Pulse test ; Pulse width ≤300µs, Duty cycle ≤2% . ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD -30 Unit E-mail:hkt@heketai.com VDS=VGS, ID=-250μA VGS=-10V, ID=-5.1A VGS=-4.5V, ID=-4.2A VDS=-15V, ID=-4.5A VGS=-10V,VDS=-15V,ID=-5.1A VGS=-10V, VDD=-15V, RGEN=6Ω, ID=-1A 1/6 HMP9435 LOW VOLTAGE MOSFET (P-CHANNEL) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD ID- Drain Current (A) Figure 6 Drain-Source On-Resistance E-mail:hkt@heketai.com 2/6 HMP9435 LOW VOLTAGE MOSFET (P-CHANNEL) ID- Drain Current (A) Normalized On-Resistance TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward E-mail:hkt@heketai.com 3/6 HMP9435 LOW VOLTAGE MOSFET (P-CHANNEL) ID- Drain Current (A) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4/6 HMP9435 LOW VOLTAGE MOSFET (P-CHANNEL) SOP-8 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.800 5.000 0.189 0.197 e 0.050（BSC） 1.270(BSC) E 5.800 6.200 0.228 0.244 E1 3.800 4.000 0.150 0.157 L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° SOP-8 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 5/6 HMP9435 LOW VOLTAGE MOSFET (P-CHANNEL) SOP-8 Tape and Reel SOP-8 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOP-8 6.40 5.40 2.10 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOP-8 Tape Leader and Trailer SOP-8 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 13 ’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø330.00 100.00 13.00 R151.00 R56.00 R6.50 12.40 17.60 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 6/6