KTC3265-EY

Plastic-Encapsulate Transistors FEATURES KTC3265(NPN) High DC current gain Complementary to KTA1298 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 800 mA 1. BASE Collector Power Dissipation PC 200 mW 2. EMITTER Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 3. COLLECTO unless otherwise specified) Symbol Parameter SOT-23 Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 35 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 30 V Emitter-base breakdown voltage VEBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=30 V, IE=0 0.1 μA Collector cut-off current IEBO VEB=5 V, IC=0 0.1 μA DC current gain hFE VCE=1V, IC= 100mA VCE(sat) IC=500mA, IB=20mA Collector-emitter saturation voltage base-emitter voltage V BE Transition frequency fT VCE=1V,IC=10mA VCE=5V, IC=10mA 100 320 0.5 0.5 V 0.8 V 120 MHz 13 pF f=100MHz Cob Collector output capacitance CLASSIFICATION OF Marking Range VCB=10V,IE=0,f=1MHZ hFE EO EY 100-200 160-320 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors KTC3265 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2