B0540W

Plastic-Encapsulate Diodes B0520W/B0530W/B0540W SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version + SOD-123 Maximum Ratings @Ta=25℃ Parameter Symbol Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking V oltage B0520W B0530W B0540W 20 30 40 14 21 28 Unit V VR RMS Reverse Voltage Reverse Voltage (DC) VR(RMS) Average Rectified Output Current Forward Current Surge Peak V Io 0.5 A IFSM 5.5 A Power Dissipation PD 500 mW RθJA 250 ℃/W Junction Temperature Tj 125 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance Junction to Ambient Voltage Rate of Change dv/dt 1000 V/μs Electrical Characteristics @Ta=25℃ Parameter Minimum reverse b reakdown voltage Forward voltage Reverse current Reverse current Capacitance between terminals Symbol B0520W B0530W B0540W 20 -- -- -- 30 -- -- -- 40 IR=20μA VF1 0.32 0.375 -- IF=0.1A VF2 0.385 0.430 0.510 VF3 -- -- 0.62 IR1 75 -- -- IR2 -- 20 -- IR3 250 -- 10 IR4 -- 130 -- IR5 -- -- 20 CT -- -- 170 V(BR) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Unit Test Conditions IR=250μA V V IR=200μA IF=0.5A IF=1A μA VR=10V VR=15V VR=20V μA VR=30V VR=40V pF VR=0,f=1MHz Page:P2-P1 Plastic-Encapsulate Diodes B0520W/B0530W/B0540W Typical Characteristics 1 Forward Characteristics Reverse 1000 Characteristics o (uA) REVERSE CURRENT IR C 0.2 0.4 0.6 FORWARD VOLTAGE VF 500 400 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 10 15 10 100 (V) GUANGDONG HOTTECH 20 VR 25 30 125 150 (V) Power Derating Curve 600 100 VR 5 REVERSE VOLTAGE Ta=25℃ REVERSE VOLTAGE 0 (V) Capacitance Characteristics 1 o Ta=25 C 1 0.1 1.0 f=1MHz 10 0.1 10 (mW) 1000 0.8 100 PD 0.01 0.0 o 0.1 T= a 2 5 FORWARD CURRENT IF T= a 1 00 o C (A) Ta=100 C 300 200 100 0 0 25 50 75 100 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD Ta (℃) Page:P2-P2