B0540W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes B0520LW/B0530W/B0540W SOD-123 SCHOTTKY BARRIER DIODE + FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version - MARKING: B0520LW:SD B0530W: SE B0540W: SF Maximum Ratings @Ta=25℃ Parameter Symbol Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM DC Blocking voltage VR RMS reverse voltage reverse voltage (DC) VR(RMS) Average rectified output current B0520LW B0530W B0540W Unit 20 30 40 V 20 28 V 14 Io 0.5 Forward surge current peak IFSM 5.5 A Power dissipation PD 500 mW Thermal resistance junction to ambient RθJA 250 ℃/W Junction temperature Tj 150 ℃ Storage temperature TSTG -55~+150 ℃ Voltage rate of change dv/dt A 1000 V/μS Electrical Characteristics @Ta=25℃ Parameter Minimum reverse breakdown voltage Forward voltage Reverse current Reverse current Capacitance between terminals Symbol B0520LW B0530W B0540W 20 -- -- -- 30 -- -- -- 40 IR=20μA VF1 0.32 0.375 -- IF=0.1A VF2 0.385 0.430 0.510 VF3 -- -- 0.62 IR1 75 -- -- IR2 -- 20 -- IR3 250 -- 10 IR4 -- 130 -- IR5 -- -- 20 CT -- -- 170 V(BR)R Unit Conditions IR=250μA V V IR=200μA IF=0.5A IF=1A μA VR=10V VR=15V VR=20V μA VR=30V VR=40V pF VR=0,f=1MHz B,Dec,2012 Typical Characteristics Forward Characteristics (uA) a =1 00 a T 0.01 0.0 T o C =2 5 o C REVERSE CURRENT IR IF FORWARD CURRENT 0.1 Reverse 1000 (A) 1 B0540W Characteristics o Ta=100 C 100 10 o Ta=25 C 1 0.1 0.2 0.4 FORWARD VOLTAGE 0.6 VF 0.8 0 10 (V) 20 REVERSE VOLTAGE 30 VR 40 (V) Power Derating Curve Capacitance Characteristics 1000 600 PD (mW) f=1MHz 100 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 10 1 0.1 500 400 300 200 100 0 1 REVERSE VOLTAGE 10 VR 100 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃) B,Dec,2012