BCX53-AH

Plastic-Encapsulate Transistors BCX51/52/53 (PNP) FEATURES IC = -1A Continuous Collector Current Low Saturation Voltage VCE(sat) < -500mV @ -0.5A Epitaxial Planar Die Construction 1. BASE Complementary NPN types: BCX54, 55, and 56 SOT-89 2. COLLECTO 3. EMITTER Product BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 BCX53 BCX53-10 BCX53-16 Marking AA AC AD AE AG AM AH AK AL Maximum Ratings (Ta=25 unless otherwise noted) Characteristic Symbol BCX51 BCX52 BCX53 Unit Collector-Base Voltage VCBO -45 -60 -100 V Collector-Emitter Voltage VCEO -45 -60 -80 V Emitter-Base Voltage VEBO -5 Continuous Collector Current IC -1 Peak Pulse Collector Current ICM -1.5 Continuous Base Current IB -100 Peak Pulse Base Current IBM -200 mA Power Dissipation (Note 1) PD 1 W TJ, TSTG -65 to +150 °C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS ( @ Ta=25 Characteristic BCX52 Breakdown Voltage BCX53 Collector-Emitter BCX51 BCX52 Breakdown Voltage (Note 2) A unless otherwise specified) Symbol BCX51 Collector-Base V BVCBO BVCEO BCX53 Min -45 -60 -100 -45 -60 -80 Typ Max Unit - - V IC = -100µA - - V IC = -10mA IE = -10µA BVEBO -5 - - V Collector Cut-off Current ICBO - - -0.1 -20 µA Emitter Cut-off Current IEBO Emitter-Base Breakdown Voltage All versions Static Forward Current Transfer Ratio (Note 2) hFE 25 40 25 - -20 250 - nA - - 160 250 -0.5 -1.0 V V VCE(sat) Base-Emitter Turn-On Voltage (Note 2) VBE(on) fT 150 - - MHz Cobo - - 25 pF Transition Frequency Output Capacitance - VCB = -30V, TA = 150°C VEB = -4V IC = -150mA, VCE = -2V Collector-Emitter Saturation Voltage (Note 2) 16 gain grp VCB = -30V IC = -5mA, VCE = -2V IC = -150mA, VCE = -2V IC = -500mA, VCE = -2V 63 100 - 10 gain grp Test Condition IC = -150mA, VCE = -2V IC = -500mA, IB = -50mA IC = -500mA, VCE = -2V IC = -50mA, VCE = -10V f = 100MHz VCB = -10V, f = 1MHz Notes: 1. For a device surface mounted on 25 mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. Notes: 2. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 0.5 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.0 0.8 TA = -55°C 0.6 TA = 25°C T A = 85°C 0.4 T A = 150°C 0.2 0.4 0.3 TA = 150°C 0.2 TA = 85°C TA = 25°C 0.1 VCE = -2V 0 0.001 TA = -55°C 0.01 0.1 1 -IC, COLLECTOR CURRENT(A) Fig 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 0.001 10 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 300 1.0 0.8 T A = -55°C 0.6 TA = 25°C TA = 85°C 0.4 TA = 150°C 0.2 IC / IB = 10 fT, GAIN-BANDWIDTH PRODUCT (MHz) -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) BCX51/52/53 Typical Characteristics 250 200 150 100 VCE = -5V f = 100MHz 50 0 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current 0 20 40 60 80 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current 160 140 f = 1MHz CAPACITANCE(pF) 120 100 80 Cibo 60 40 20 Cobo 0 0 10 20 30 40 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2