UMW SI2301B

UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX   120 mΩ@-4.5V  -20 V SOT-23 2.5 A 150 mΩ@-2.5V   1. GATE 2. SOURCE 3. DRAIN APPLICATION z Load Switch for Portable Devices z DC/DC Converter FEATURE TrenchFET Power MOSFET MARKING Equivalent Circuit A1SHB Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ=150℃) ID -2.5 Pulsed Drain Current IDM -10 Continuous Source-Drain Diode Current IS -0.72 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t ≤ 5s) Rθ JA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 www.umw-ic.com 1 Unit V A ℃ 友台半导体有限公司 UMW R UMW SI2301B Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -20 Gate-source threshold voltage VGS(th) VDS =VGS, ID =-250µA -0.4 -1 V Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =-20V, VGS =0V -1 µA Drain-source on-state resistance a Forward transconductance RDS(on) a gfs VGS =-4.5V, ID =-2.8A 0.095 0.120 VGS =-2.5V, ID =-2.0A 0.120 0.150 VDS =-5V, ID =-2.8A 4.0 Ω S b Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf 405 VDS =-10V,VGS =0V,f =1MHz pF 75 55 VDS =-10V,VGS =-4.5V,ID =-3A VDS =-10V,VGS =-2.5V,ID =-3A 5.5 10 3.3 6 0.7 nC 1.3 f =1MHz VDD=-10V, RL=10Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 6.0 Ω 11 20 35 60 30 50 10 20 ns Drain-source body diode characteristics Continuous source-drain diode current Pulse diode forward current Body diode voltage a IS -1.3 TC=25℃ -10 ISM VSD A IS=-0.7A -0.8 -1.2 V Notes : a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. b.Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司