BUK764R0-55B,118

BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 5 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits „ AEC Q101 compliant „ Low conduction losses due to low on-state resistance „ Suitable for standard level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications „ 12 V and 24 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; see Figure 1; see Figure 4 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Min [1] Typ Max Unit - - 55 V - - 75 A - - 300 W - 3.4 4 mΩ Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 25 A; resistance Tj = 25 °C; see Figure 7; see Figure 12 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped - - 1.2 J VGS = 10 V; ID = 25 A; VDS = 44 V; Tj = 25 °C; see Figure 13 - 25 - nC Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Dynamic characteristics QGD [1] gate-drain charge Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain[1] 3 S source mb D mounting base; connected to drain Simplified outline Graphic symbol mb D G mbb076 S 2 1 3 SOT404 (D2PAK) [1] It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number BUK764R0-55B BUK764R0-55B Product data sheet Package Name Description D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 Version © Nexperia B.V. 2017. All rights reserved 2 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V VDGR drain-gate voltage RGS = 20 kΩ - 55 V VGS gate-source voltage ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 4 Tmb = 100 °C; VGS = 10 V; see Figure 1 -20 20 V [1] - 75 A [2][3] - 193 A [1] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 4 - 774 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 300 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C [2][1] - 193 A [1] - 75 A pulsed; tp ≤ 10 µs; Tmb = 25 °C - 774 A - 1.2 J - - J Source-drain diode source current IS Tmb = 25 °C peak source current ISM Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [1] [4][5][6][ 7] Continuous current is limited by package. [2] Current is limited by power dissipation chip rating. [3] Refer to document 9397 750 12572 for further information. [4] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. [5] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [6] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [7] Refer to application note AN10273 for further information. BUK764R0-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 3 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 001aaf871 200 03na19 120 ID (A) Pder (%) 150 80 100 (1) 40 50 0 0 25 75 125 0 175 50 100 150 200 Tmb (°C) Tmb (°C) (1) Capped at 75 A due to package. Fig 1. Continuous drain current as a function of mounting base temperature. Fig 2. Normalized total power dissipation as a function of mounting base temperature 003aab677 102 IAL (A) (1) 10 (2) (3) 1 10-1 10-3 10-2 10-1 1 tAL (ms) 10 (1) Single-pulse; Tj = 25 °C. (2) Single-pulse; Tj = 150 °C. (3) Repetitive Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time. BUK764R0-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 4 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 03ng55 103 tp = 10 μ s ID (A) Limit RDSon = VDS / ID 102 100 μ s (1) 1 ms DC 10 ms 10 100 ms 1 10-1 1 10 102 VDS (V) (1) Capped at 75 A due to package. Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to see Figure 5 mounting base - - 0.5 K/W thermal resistance from junction to mounted on a printed-circuit ambient board; minimum footprint - 50 - K/W 03ng56 1 Zth(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 10-2 δ= P 0.02 single shot tp T t tp T 10-3 10-6 Fig 5. 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Transient thermal impedance from junction to mounting base as a function of pulse duration BUK764R0-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 5 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 11 2 3 4 V ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 11 - - 4.4 V ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 11 1 - - V IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µA VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µA IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA VGS = 10 V; ID = 25 A; Tj = 175 °C; see Figure 7; see Figure 12 - - 8 mΩ VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 7; see Figure 12 - 3.4 4 mΩ ID = 25 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C; see Figure 13 - 86 - nC - 18 - nC - 25 - nC - 5082 6776 pF - 1054 1265 pF - 450 617 pF - 23 - ns RDSon drain-source on-state resistance Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; see Figure 14 VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG(ext) = 10 Ω; Tj = 25 °C tr rise time - 51 - ns td(off) turn-off delay time - 71 - ns tf fall time - 41 - ns LD internal drain inductance from upper edge of drain mounting base to centre of die; Tj = 25 °C - 2.5 - nH from drain lead 6 mm from package to centre of die; Tj = 25 °C - 4.5 - nH from source lead to source bond pad; Tj = 25 °C - 7.5 - nH - 0.85 1.2 V - 95 - ns - 251 - nC LS internal source inductance Source-drain diode VSD source-drain voltage IS = 40 A; VGS = 0 V; Tj = 25 °C; see Figure 15 trr reverse recovery time Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V; VDS = 30 V; Tj = 25 °C BUK764R0-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 6 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 300 ID 20 (A) 10 250 03nh22 7 03nh21 7 6.5 RDSon (m Ω) 6 6 5.5 200 150 5 5 100 4.5 4 50 VGS (V) = 4 0 3 0 Fig 6. 2 4 6 8 VDS (V) 10 Output characteristics: drain current as a function of drain-source voltage; typical values 03aa35 10−1 min typ Fig 7. 10 15 VGS (V) max 20 Drain-source on-state resistance as a function of gate-source voltage; typical values 03nh19 120 gfs (S) 100 ID (A) 10−2 5 80 10−3 60 10−4 40 10−5 20 10−6 0 0 2 4 0 6 20 40 ID (A) VGS (V) Fig 8. Sub-threshold drain current as a function of gate-source voltage BUK764R0-55B Product data sheet Fig 9. 60 Forward transconductance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 7 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 03nh20 100 03aa32 5 ID (A) VGS(th) (V) 80 4 60 3 40 2 max typ min Tj = 175 °C 20 1 Tj = 25 °C 0 0 2 4 Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 03ne89 2 0 −60 6 VGS (V) 0 60 120 180 Tj (°C) Fig 11. Gate-source threshold voltage as a function of junction temperature 03nh18 10 VGS (V) a 8 1.5 6 VDS (V) = 14 VDS (V) = 44 1 4 0.5 2 0 -60 0 0 60 120 Tj (°C) Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature BUK764R0-55B Product data sheet 0 180 20 40 60 80 100 QG (nC) Fig 13. Gate-source voltage as a function of turn-on gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 8 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET C (pF) 03nh24 7000 03nh17 100 ID (A) 6000 Ciss 80 5000 60 4000 3000 40 Coss 2000 Tj = 175 °C 20 1000 0 10-1 Tj = 25 °C Crss 1 10 VDS (V) 102 Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values BUK764R0-55B Product data sheet 0 0.0 0.2 0.4 0.6 0.8 1.0 VSD (V) Fig 15. Reverse diode current as a function of reverse diode voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 9 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 7. Package outline SOT404 Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) A A1 E mounting base D1 D HD 2 Lp 1 3 c b e e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 2.54 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-02-11 06-03-16 SOT404 Fig 16. Package outline SOT404 (D2PAK) BUK764R0-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 10 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BUK764R0-55B v.5 20110422 Product data sheet - BUK75_764R0-55B_4 Modifications: BUK75_764R0-55B_4 BUK764R0-55B Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Type number BUK764R0-55B separated from data sheet BUK75_764R0-55B_4. 20071004 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 BUK75_764R0-55B_3 © Nexperia B.V. 2017. All rights reserved 11 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 9.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. BUK764R0-55B Product data sheet Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 12 of 14 BUK764R0-55B Nexperia N-channel TrenchMOS standard level FET Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 10. Contact information For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com BUK764R0-55B Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 5 — 22 April 2011 © Nexperia B.V. 2017. All rights reserved 13 of 14 Nexperia BUK764R0-55B N-channel TrenchMOS standard level FET 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 © Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 April 2011