2SA1492

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1492 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3856 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -15 A IB Base Current-Continuous -4 A PC Collector Power Dissipation @ TC=25℃ 130 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range SPTECH website：www.superic-tech.com 1 SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1492 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -180V ; IE=0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC=0 -100 μA hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz 500 pF Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 20 MHz 0.6 μs 0.9 μs 0.2 μs fT CONDITIONS MIN TYP. MAX -180 UNIT V 50 180 Switching times ton Turn-on Time tstg Storage Time tf  IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC= -40V Fall Time hFE Classifications O P Y 50-80 80-130 130-180 SPTECH website：www.superic-tech.com 2