WSD2054DN22

WSD2054DN22 Dual N-Ch MOSFET Product Summery General Description The WSD2054DN22 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 50mΩ 5A Applications The WSD2054DN22 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features DFN2X2-6L Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=70℃ IDM Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±8 V 1 5.0 A 1 4.2 A 20 A Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Typ. Max. Unit --- 125 ℃/W --- 75 ℃/W Dec.2014 WSD2054DN22 Dual N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) 2 Static Drain-Source On-Resistance Min. Typ. Max. Unit VGS=0V , ID=250uA 20 --- --- V Reference to 25℃ , ID=1mA --- 0.024 --- V/℃ VGS=4.5V , ID=1.8A --- 50 65 --- 65 75 75 90 0.4 0.75 1.2 V mV/℃ VGS=2.5V , ID=1.5A VGS=1.8V , ID=1A VGS(th) △VGS(th) Gate Threshold Voltage VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -2.51 --- VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 mΩ uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=3A --- 7.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.2 2.4 Ω Qg Total Gate Charge (4.5V) --- 6.4 --- Qgs Gate-Source Charge --- 0.54 --- Qgd Gate-Drain Charge --- 1.25 --- Td(on) VDS=15V , VGS=4.5V , ID=1A --- 1.6 --- Rise Time VDD=10V , VGS=4.5V , RG=3.3Ω --- 29.6 --- Turn-Off Delay Time ID=1A --- 18.8 --- Fall Time --- 6 --- Ciss Input Capacitance --- 450 --- Coss Output Capacitance --- 70 --- Crss Reverse Transfer Capacitance --- 43 --- Min. Typ. Unit --- --- Max. 5.0 --- --- 20 A --- --- 1.2 V --- 5.5 --- nS --- 1.8 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=2A , dI/dt=100A/µs , TJ=25℃ A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper ,t