WSD1216DN22

WSD1216DN22 P-Ch MOSFET General Description Product Summery The WSD1216DN22 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -12V 15mΩ -9.4A Applications The WSD1216DN22 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN2X2-6L Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage ID@Tc=25℃ ID@Tc=70℃ IDM ±8 V 1 -9.4 A 1 -7.5 A -37.5 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V 300μS Pulsed Drain Current,VGS=-4.5V2 3 PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Max. Unit --- 80 ℃/W --- 28 ℃/W Dec.2014 WSD1216DN22 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -12 --- --- V Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ --- 15 20 --- 20 27 -0.4 --- -0.9 V --- 3.13 --- mV/℃ VDS=-8V , VGS=0V , TJ=25℃ --- --- -1 VDS=-8V , VGS=0V , TJ=55℃ --- --- -5 VGS=-4.5V , ID=-9.4A VGS=-2.5V , ID=-5.9A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-1A --- 16 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 --- Ω Qg Total Gate Charge (-4.5V) --- 15.5 --- Qgs Gate-Source Charge --- 2.3 --- --- 4.6 --- Qgd VDS=-10V , VGS=-4.5V , ID=-9.4A Gate-Drain Charge uA nC --- 7 --- Rise Time VDD=-10V , VGS=-4.5V , RG=6Ω --- 12 --- Turn-Off Delay Time ID=-1A, RL=10Ω --- 21 --- Fall Time --- 12 --- Ciss Input Capacitance --- 1400 --- Coss Output Capacitance --- 297 --- Crss Reverse Transfer Capacitance --- 237 --- Min. Typ. Max. Unit --- --- -2.0 A --- --- -37.7 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-10V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-9.4A,dI/dt=100A/µs , TJ=25℃ --- --- -1 V --- 26 --- nS --- 10 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSD1216DN22 P-Ch MOSFET Typical Characteristics 40 ID=-9.4A RDSON (mΩ) 35 30 25 20 18 10 1 Fig.1 Typical Output Characteristics 2 3 -VGS (V) 4 5 6 Fig.2 On-Resistance vs. Gate-Source 12 VDS=-10V ID=-9.4A -IS Source Current(A) 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.0 0.2 0.4 0.6 0.8 1.0 -VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 0.2 1.4 1.0 0.6 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 50 100 150 Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 TJ , Junction Temperature (℃) Page 3 Dec.2014 WSD1216DN22 P-Ch MOSFET 10000 Capacitance (pF) Ciss 1000 Coss Crss 100 F=1.0MHz 10 4 1 6 8 10 12 -VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Gate Charge Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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