WSK96N08

WSK96N08 N-Ch MOSFET Product Summery General Description BVDSS The WSK96N08 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . 80V The WSK96N08 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. RDSON ID 7mΩ 96A TO-263-2L Pin Configuration Applications z Switching application z Power management for inverter systems Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±25 V 1 90 A 1 64 A 360** A 416*** mJ ID@TC=25℃ ID@TC=100℃ IDM EAS Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 Single Pulse Avalanche Energy IAS Avalanche Current 200 PD@TC=25℃ Total Power Dissipation3 185 W PD@TC=100℃ Total Power Dissipation3 92 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Note: A * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on 1in2 FR-4 board. *** Limited by TJmax , starting TJ=25°C , L = 0.5mH, RG= 25Ω, VGS =10V. www.winsok.tw Page 1 Dec.2014 WSK96N08 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gf gfs orward Transconductance V V/℃ 0.0 VGS=10V , ID=45A --- 7 9 mΩ VGS=6V , ID=10A --- 10 12 mΩ 2 3 4 V --- mV/℃ VGS=VDS , ID =250uA --- -6.57 VDS=80V , VGS=0V , TJ=25℃ ----- - 1 VDS=80V , VGS=0V , TJ=55℃ --- - 2 VGS=±20V , VDS=0V --- - ±100 nA VDS=5V , ID=20A 18 --- --- S --- Gate-Drain Charge --- 28 --- Turn-On Delay Time --- 25 --- VDS=50V , VGS=10V , ID=120A uA nC Rise Time VDD=30V , VGS=10V , --- 42 --- Turn-Off Delay Time RG=6Ω ID=145A , --- 62 --- Fall Time RL=30Ω --- 19 --- --- 3800 --- --- 389 --- --- 250 --- --- 0.8 --- V --- 60 --- ns --- 125 --- nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VSD Diode Forward Voltage trr Reverse Recovery Time Qrr ----- --- 16 Qgd Unit Reference to 25℃ , ID=1mA 86 Gate-Source Charge Tf --- Max. --- Total Gate Charge (10V) Td(off) 80 Typ. --- Qg Tr VGS=0V , ID=250uA Min. --- Qgs Td(on) Conditions VDS=30V , VGS=0V , f=1MHz Reverse Recovery Charge ISD=45A,VGS=0V ISD=45A,dISD/dt=100A/μs ns pF Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.winsok.tw Page 2 Dec.2014 WSK96N08 N-Ch MOSFET Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Thermal Zθjc ID-Drain Current(A) Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) VDS-Drain-Source Voltage(V) VDS-Drain-Source Voltage (V) www.winsok.tw ID-Drain Current(A) Page 3 Dec.2014 WSK96N08 N-Ch MOSFET Typical Operating Characteristics Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics C-Capacitance(pF) VGS-Gate-Source Voltage (V) 12 VSD-Source-Drain Voltage(V) VDS-Drain-Source Voltage (V) www.winsok.tw Q G-Gate Charge (nC) Page 4 Dec.2014 WSK96N08 N-Ch MOSFET Device Per Unit Package Type Unit Quantity TO-263-2L Reel 50 Package Information TO-263-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 4.37 4.57 4.77 A1 1.22 1.27 1.42 A2 2.49 2.69 2.89 A3 0 0.13 0.25 b 0.7 0.81 0.96 b1 1.17 1.27 1.47 c 0.3 0.38 0.53 D1 8.5 8.7 8.9 D4 6.6 - - E 9.86 10.16 10.36 E5 7.06 - - 2.54 BSC e H 14.7 15.1 15.5 H2 1.07 1.27 1.47 L 2 2.3 2.6 L1 1.4 1.55 1.7 L4 θ www.winsok.tw 0.25 BSC 0° Page 5 5° 9° Dec.2014 WSK96N08 N-Ch MOSFET Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.winsok.tw Page 6 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.