WSK200N08A

WSK200N08A N-Ch MOSFET General Description Product Summery The WSK200N08A is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSK200N08A meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 80V 3mΩ 200A Applications High power DC/DC converters and switch mode power supply Features DC Motor control and Class D Amplifier z Advanced high cell density Trench technology z Super Low Gate Charge TO-263 Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±25 V 1 ID@TC=25℃ Continuous Drain Current, VGS @ 10V 200 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 144 A 790 A IDM 2, Pulsed Drain Current TC=25°C EAS Avalanche Energy, Single pulse,L=0.5mH 1496 mJ IAS Avalanche Current, Single pulse,L=0.5mH PD@TC=25℃ 200 A 4 345 W 4 Total Power Dissipation PD@TC=100℃ Total Power Dissipation 173 W TSTG Storage Temperature Range -55 to 175 ℃ Operating Junction Temperature Range 175 ℃ TJ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw Page 1 1 Typ. Max. Unit --- 62.5 ℃/W --- 0.43 ℃/W Dec.2014 WSK200N08A N-Ch MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) VGS=10V,ID=100A VGS=VDS , ID =250uA VGS(th) Temperature Coefficient Min. Typ. Max. Unit 80 --- --- V --- 0.096 --- V/℃ --- 3.0 4.0 mΩ 2.0 3.0 4.0 V mV/℃ --- -5.5 --- VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 10 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±25V , VDS=0V --- --- ±100 nA Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.2 --- Ω Qg Total Gate Charge (10V) --- 197 --- Qgs Gate-Source Charge --- 31 --- --- 75 --- --- 28 --- Qgd Td(on) VDS=80V , VGS=10V , ID=30A Gate-Drain Charge Turn-On Delay Time nC Rise Time VDD=50V , VGS=10V , --- 18 --- Turn-Off Delay Time RG=3Ω, ID=30A --- 42 --- Fall Time --- 54 --- Ciss Input Capacitance --- 8154 --- Coss Output Capacitance --- 1029 --- Crss Reverse Transfer Capacitance --- 650 --- Min. Typ. Max. Unit 160 --- --- mJ Min. Typ. Max. Unit --- --- 200 A --- --- 350 A --- --- 1.2 V --- 30 --- nS --- 52 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=28A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,6 2,6 Pulsed Source Current 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions VG=VD=0V , Force Current VGS=0V , IS=15A , TJ=25℃ IF=15A,dI/dt=100A/µs,TJ=25℃ Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. www.winsok.tw Page 2 Dec.2014 WSK200N08A N-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 350 225 200 ID - Drain Current (A) Ptot - Power (W) 300 250 200 150 100 150 125 100 75 50 25 50 o o 0 limited by package 175 TC=25 C 0 20 40 0 60 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 Tc - Case Temperature (°C) 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Safe Operation Area im it 100us on )L 100 ds ( 1ms R ID - Drain Current (A) 1000 10ms 10 DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 300 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.01 0.02 0.01 0.001 Single Mounted on minimum pad o RθJA : 62.5 C/W 0.0001 0.0001 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.winsok.tw Page 2 Dec.2014 WSK200N08A N-Ch MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 5.0 320 VGS= 5.5,6,7,8,9,10V RDS(ON) - On - Resistance (mW) 280 ID - Drain Current (A) 240 5V 200 160 4.5V 120 4V 80 40 0 0.0 1.0 2.0 3.0 4.0 5.0 4.5 4.0 VGS=10V 3.5 3.0 2.5 2.0 1.5 0 6.0 50 VDS - Drain - Source Voltage (V) 100 150 200 250 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 14 1.6 IDS=100A Normalized Threshold Voltage RDS(ON) - On - Resistance (mW) 12 10 8 6 4 2 0 3 4 5 6 7 8 9 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 VGS - Gate - Source Voltage (V) www.winsok.tw IDS =250µA 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSK200N08A N-Ch MOSFET Typical Operating Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 2.4 2.2 2.0 200 VGS = 10V 100 IDS = 100A o IS - Source Current (A) Normalized On Resistance 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 o Tj=25 C 1 RON@Tj=25 C: 2.9mΩ 0 25 50 75 100 125 150 175 0.1 0.0 0.4 0.6 0.8 1.0 1.2 VSD - Source - Drain Voltage (V) Capacitance Gate Charge VDS= 64V 9 VGS - Gate-source Voltage (V) 10500 9000 Ciss 7500 6000 4500 3000 Coss 8 16 24 32 8 7 6 5 4 3 2 0 40 VDS - Drain - Source Voltage (V) www.winsok.tw IDS= 100A 1 Crss 0 1.4 10 Frequency=1MHz 1500 0.2 Tj - Junction Temperature (°C) 12000 C - Capacitance (pF) 10 o 0.2 -50 -25 0 Tj=175 C 0 40 80 120 160 200 QG - Gate Charge (nC) Page 5 Dec.2014 WSK200N08A N-Ch MOSFET TO-263 A E b b2 E1 c2 c e SEE VIEW A 0 GAUGE PLANE SEATING PLANE L VIEW A S Y M B O L A TO-263 MIN. 4.06 A1 b b2 c c2 D D1 E E1 e H L L1 L2 0.00 0.51 1.14 0.38 MAX. 4.83 0.25 0.99 1.78 0.74 1.14 8.38 6.00 9.65 6.22 1.65 9.65 9.00 11.43 9.00 θ 0o 2.54 BSC 14.61 1.78 - www.winsok.tw RECOMMENDED LAND PATTERN INCHES MILLIMETERS 15.88 2.79 1.68 1.78 8o MIN. 0.160 0.000 0.020 0.045 0.015 0.045 0.330 0.236 0.380 0.245 MAX. 0.190 0.010 0.039 0.070 0.029 0.065 0.380 0.354 0.450 0.354 0.100 BSC 0.575 0.625 0.070 0.110 0.066 0.070 0o 8o Page 6 8.5 MIN. 9.0 MIN. 10.5 1.6 MIN. 4.0 MIN. 5.08 UNIT: mm Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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