TRANSISTOR (NPN)
FEATURES
Complimentary to SS8550
SOT-23
MARKING: Y1
1.BASE
2.EMITTER
3.COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
1.5
A
PC
Collector Power Dissipation
0.3
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC= 100μA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 0.1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1
μA
Collector cut-off current
ICEO
VCB=20V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE=1V, IC= 100mA
200
hFE(2)
VCE=1V, IC= 800mA
40
350
DC current gain
Collector-emitter saturation voltage
VCE(sat)
IC=800mA, IB= 80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80mA
1.2
V
Transition frequency
fT
VCE=10V, IC= 50mA
f=30MHz
100
1 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
MHz
Typical Characteristics
SS8050
2 of 3
Copyright © All right reserved: Heyuan China Base Electronics Technology Co., Ltd.
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
3 of 3
Copyright © All right reserved:
Heyuan China Base Electronics Technology Co., Ltd.
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