S8050 SOT23

S8050 S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 SOT-23 Collector Current: IC=0.5A 1．BASE 2．EMITTER 3．COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 100µA, Collector-emitter breakdown voltage V(BR)CEO IC=1mA, Emitter-base breakdown voltage V(BR)EBO IE=100µA, IE=0 IB=0 IC=0 MIN TYP MAX UNIT 40 V 25 V 5 V Collector cut-off current ICBO VCB=40 V, IE=0 0.1 µA Collector cut-off current ICEO VCB=20V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA HFE(1) VCE=1V, IC= 50mA 200 HFE(2) VCE=1V, IC= 500mA 50 350 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V VCE=6V, Transition frequency www.tw-gmc.com fT f=30MHz 1 IC= 20mA 150 MHz S8050 Typical Characteristics IC -90 —— VCE -360uA -240uA -200uA -40 -160uA -120uA -80uA -20 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VBEsat —— -10 COMMON EMITTER VCE=-1V -12 1 T a= 00 ℃ -100 IC -500 (mA) IC — — IC -100 0℃ 10 T a= ℃ 25 T a= -10 -500 β=10 -1 -10 (mA) —— VBE fT — — IC (mA) IC (MHz) (mA) 400 -500 -100 COLLECTOR CURRENT Ta=100℃ Ta=25℃ TRANSITION FREQUENCY fT -100 -10 COMMON EMITTER VCE=-1V -1 -0 -300 -600 -900 100 10 -1200 COMMON EMITTER VCE=-6V Ta=25℃ -1 -10 Cob/Cib — — VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) Cib Cob CAPACITANCE PC 400 50 10 -100 COLLECTOR CURRENT BASE-EMMITER VO LTAGE VBE (mV) C IC -500 -10 -500 -100 VCEsat IC COLLECTOR CURRENT -10 COLLECTOR CURRENT β=10 -1 -1 VCE (V) 25℃ T a= -800 -400 IC 100 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 COLLECTOR CURRENT Ta=25℃ IB=-40uA -10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) DC CURRENT GAIN -280uA -30 -0 Ta=100℃ -320uA -50 IC — — 500 COMMON EMITTER Ta=25℃ hFE (mA) -60 COLLECTOR CURRENT IC -80 -70 hFE -400uA —— IC (mA) Ta 300 200 100 f=1MHz IE=0/IC=0 Ta=25 ℃ 1 -0.1 -1 REVERSE VOLTAGE www.tw-gmc.com -10 V 0 -20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 2 Ta 125 (℃ ) 150 S8050 PACKAGE OUTLINE Plastic surface mounted package; 3 leads www.tw-gmc.com SOT-23 3