WSD4080DN56

WSD4080DN56 N-Channel MOSFET General Description Product Summery The WSD4080DN56 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 4.5mΩ 85A Applications  Battery protection  Lo Load switch  Uninterruptible power supply Features  Advanced high cell density Trench technology DFN5X6-8 Pin Configuration  Super Low Gate Charge  Excellent CdV/dt effect decline  100% EAS Guaranteed  Green Device Available Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 85 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 58 A IDM Pulsed Drain Current2 100 A EAS Single Pulse Avalanche Energy3 110.5 mJ IAS Avalanche Current 47 A PD@TC=25℃ Total Power Dissipation4 52.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 2.4 ℃/W www.winsok.tw Page 1 Rev 2: Apr.2019 WSD4080DN56 N-Channel MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) IDSS Gate Threshold Voltage Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V VGS=10V , ID=10A --- 4.5 6.5 VGS=4.5V , ID=5A --- 6.4 8.5 VGS=VDS , ID =250uA 1.0 --- 2.5 VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 mΩ V uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=5A --- 27 --- S Qg Total Gate Charge (4.5V) --- 20 --- Qgs Gate-Source Charge --- 5.8 --- Qgd Gate-Drain Charge --- 9.5 --- Turn-On Delay Time --- 15.2 --- --- 8.8 --- --- 74 --- Fall Time --- 7 --- Ciss Input Capacitance --- 2354 --- Coss Output Capacitance --- 215 --- Crss Reverse Transfer Capacitance --- 175 --- IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 70 A Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Td(on) Tr Td(off) Tf VSD Rise Time Turn-Off Delay Time VDS=20V , VGS=4.5V , ID=10A VDD=15V , VGS=10V RG=3.3Ω ID=1A VDS=15V , VGS=0V , f=1MHz nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=47A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Rev 2: Apr.2019 WSD4080DN56 N-Channel MOSFET Typical Characteristics 12 VGS =10V 10 VGS =7V 8 VGS=5V VGS =4.5V 6 VGS=3V 4 2 0 0 0.1 0.2 0.3 0.4 V DS , Drain-to-Source Voltage (V) 0.5 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 12 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0 0.2 0.4 0.6 0.8 VSD , Source-to-Drain Voltage (V) 1 Fig.3 Forward Characteri stics of Reverse Fig.4 Gate-Charge Characteristics 1.5 2.0 1 1.5 0.5 1.0 0.5 0 -50 50 100 150 TJ ,Junction Temperature ( ℃) 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw -50 Fig.6 Normalized RDSON vs. TJ Page 3 Rev 2: Apr.2019 WSD4080DN56 N-Channel MOSFET 1000.00 10us 100.00 100us ID (A) 10.00 10ms 100ms 1.00 DC 0.10 TC=25℃ Single Pulse 0.01 0.1 1 10 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 0.02 PDM TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 TJpeak = TC + PDM x RθJC 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform www.winsok.tw VGS Fig.11 Unclamped Inductive Switching Wave Page 4 Rev 2: Apr.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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