CH3D10065G

VRRM CH3D10065G Silicon Carbide Schottky Diode Features = 650 V IF ( TC≤135℃) = 14.5 A 25 nC QC = Package  Zero Reverse Recovery Current  Zero Forward Recovery Voltage  Positive Temperature Coefficient on VF  Temperature-independent Switching  175°C Operating Junction Temperature Benefits TO-263-2  Replace Bipolar with Unipolar Device  Reduction of Heat Sink Size  Parallel Devices Without Thermal Runaway  Essentially No Switching Losses Applications  Switch Mode Power Supplies  Power Factor Correction  Motor drive, PV Inverter, Wind Power Station Part Number Package Marking CH3D10065G TO-263-2 CH3D10065G Maximum Ratings Symbol Parameter Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 650 V TC = 25℃ VRSM Surge Peak Reverse Voltage 650 V TC = 25℃ DC Blocking Voltage 650 V TC = 25℃ Forward Current 29 14.5 10 A VR IF TC ≤ 25℃ TC ≤ 135℃ TC ≤ 153℃ IFSM Non-Repetitive Forward Surge Current 85 A TC = 25℃, tp = 8.3ms, Half Sine Wave Ptot Power Dissipation 129 W TC = 25℃ TC Maximum Case Temperature 153 ℃ -55 to 175 ℃ TJ, TSTG Operating Junction and Storage Temperature WS3A010065J Version 2.0 1 Note Fig.3 Electrical Characteristics Symbol Parameter VF Forward Voltage IR Reverse Current Typ. Max. 1.4 1.65 1.75 2.3 1 20 5 100 Unit V µA 575 C Total Capacitance 57 Total Capacitive Charge 25 IF = 10A, TJ = 25℃ Note Fig.1 IF = 10A, TJ = 175℃ VR = 650V, TJ = 25℃ VR = 650V, TJ = 175℃ Fig.2 VR = 0V, TJ = 25℃, f = 1MHz / pF VR = 200V, TJ = 25℃, f = 1MHz Fig.5 VR = 400V, TJ = 25℃, f = 1MHz 46 QC Test Conditions / nC VR = 650V, IF = 10A di/dt = 200A/µs, TJ = 25℃ Fig.4 Thermal Characteristics Symbol Parameter Typ. Unit Note 1.16 ℃/W Fig.6 RθJC Thermal Resistance from Junction to Case RθJA Thermal Resistance from Junction to Ambient 80 ℃/W Tsold Soldering Temperature 260 ℃ IF (A) IR (μA) Typical Performance VF (V) VR (V) Figure 1. Forward Characteristics WS3A010065J Version 2.0 Figure 2. Reverse Characteristics 2 QC (nC) PTot (W) Typical Performance VR (V) TC (℃) Figure 4. Total Capacitive Charge vs. Reverse Voltage C (pF) Thermal Resistance（℃/W） Figure 3. Power Derating VR (V) T(sec) Figure 5. Total Capacitance vs. Reverse Voltage WS3A010065J Version 2.0 Figure 6. Transient Thermal Impedance 3 Package Dimensions Package TO-263-2 Symbol Min. (mm) Typ. (mm) Max. (mm) A 9.9 10.1 10.3 B 9.90 10.1 10.3 C 8.50 8.7 8.90 D 4.85 5.05 5.25 E 3.00 3.2 3.40 F 1.05 1.25 1.45 G 0.60 0.8 1.00 H 2.34 2.54 2.74 I 4.40 4.6 4.80 J 2.40 2.6 2.80 K 2.55 1.75 2.95 Simplified Diode Model Equivalent IV Curve for Model Mathematical Equation VF=Vt + IF×Rdiff IF=f（VF） Vt = -0.0011×Tj + 0.97 [V] Rdiff = 1×10-6×Tj2 + 9×10-5×Tj + 0.043 [Ω] Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C IF= Forward Current Less than 20A