WST6401

WST6401 P-Ch MOSFET General Description Product Summery The WST6401 is the highest performance trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID -20V 135mΩ -2.5A Applications The WST6401 meet the RoHS and Green Product requirement with full function reliability approved. z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology SOT-23N Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@Tc=25℃ ID@Tc=70℃ IDM Rating Units Drain-Source Voltage -20 V Gate-Source Voltage ±12 V 1 -2.5 A 1 -1.9 A -10 A Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 0.7 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 --- Max. 178 Unit ℃/W --- 80 ℃/W Rev:1.0 May.2019 WST6401 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Min. Typ. Max. Unit -20 --- --- V --- -0.016 --- V/℃ --- 135 165 --- 150 186 --- 250 355 -0.5 -0.7 -1.2 --- 3.97 --- VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=±8V , VDS=0V --- --- ±100 nA --- . --- S 13.1 --- Ω --- 3.0 --- --- 0.5 --- = VGS=0V , ID -250uA Reference to 25℃ , ID=-1mA VGS=-4.5V , ID -2A = RDS(ON) Static Drain-Source On-Resistance2 = VGS=-2.5V , ID -1A = VGS=-1.8V , ID -1.5A VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Qg Gate Resistance VGS=VDS , ID =-250uA = VDS=-5V , ID -2A VDS=0V , VGS=0V , f=1MHz Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-2A --- Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 0.8 --- Turn-On Delay Time --- 10 --- Td(on) mΩ V mV/℃ uA nC Rise Time VDD=-15V , VGS=-4.5V , RG=3.0Ω --- 5.0 --- Turn-Off Delay Time ID=-2A --- 21 --- Fall Time --- 7 --- Ciss Input Capacitance --- 290 ---- Coss Output Capacitance --- 60 --- --- 34 --- Min. Typ. Max. Unit --- --- -2.5 A Tr Td(off) Tf Crss VDS=-15V , VGS=0V , f=1MHz Reverse Transfer Capacitance ns pF Diode Characteristics Symbol IS Parameter Conditions 1,4 Continuous Source Current 2,4 ISM Pulsed Source Current VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -10 A --- --- -1.2 V Notes: 1、Repetitive Rating: Pulse width limited by maximum junction temperature. 2、Surface Mounted on FR4 Board, t ≤ 10 sec. 3、Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4、Guaranteed by design, not subject to production www.winsok.tw Page 2 Rev:1.0 May.2019 WST6401 P-Ch MOSFET PD Power(W) -ID- Drain Current (A） Typical Characteristics TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 2 Drain Current ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 1 Power Dissipation -Vds Drain-Source Voltage (V) -ID- Drain Current (A) Figure 4 Drain-Source On-Resistance ID- Drain Current (A) Normalized On-Resistance Figure 3 Output Characteristics TJ-Junction Temperature(℃) -Vgs Gate-Source Voltage (V) Figure 5 Transfer Characteristics www.winsok.tw Figure 6 Drain-Source On-Resistance Page 3 Rev:1.0 May.2019 WST6401 C Capacitance (pF) Rdson On-Resistance(Ω) P-Ch MOSFET -Vgs Gate-Source Voltage (V) -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) Figure 7 Rdson vs Vgs -Vds Drain-Source Voltage (V) Qg Gate Charge (nC) Figure 8 Capacitance vs Vds -Vsd Source-Drain Voltage (V) Figure 10 Source- Drain Diode Forward r(t),Normalized Effective Transient Thermal Impedance Figure 9 Gate Charge Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Rev:1.0 May.2019 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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