SX040K

SX040K Technical Data Data Sheet N2045, Rev.- SX040K Sensitive gate SCRs Circuit Diagram DPAK Description The SX040K provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on straight hair, igniter etc. Maximum Ratings: Characteristics Symbol Condition Max. Units Storage junction temperature range TJ - -40 to +110 C Operating junction temperature range Repetitive peak off-state voltage Tstg - -40 to +150 C VDRM - 600 V Repetitive peak reverse voltage VRRM - 600 V RMS on-state current Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) I(TRMS) 4 A 30 A 2 It - 4.5 A2 s Critical rate of rise of on-state current dI/dt - 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM 1.2 A PGM - 2 W PG(AV) - 0.2 W DPAK(TC=90℃) ITSM Peak gate power (tp=20μs, Tj=110℃) Average gate power dissipation(Tj=110℃) - Electrical Characteristics(Tj=25℃ unless otherwise specified) Symbol IGT VGT VGD Condition VD=12V RL=33Ω VD=VDRM Tj=110℃ Min. Typ. Max. - 50 200 Units μA - 0.6 0.8 V 0.2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A VD=2/3VDRM Tj=110℃ RGK=1KΩ - - 5 mA 10 - - V/μs dV/dt  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX040K Technical Data Data Sheet N2045, Rev.- Static Characteristics Symbol Condition VTM IDRM IRRM Max. ITM=8A tp=380μs,Tj=25℃ VD=VDRM VR=VRRM, Tj=25℃ VD=VDRM VR=VRRM, Tj=110℃ Units 1.5 5 100 V μA μA Value Units 6.5 ℃/W Thermal Resistances Symbol Condition Rth(j-c) Junction to case DPAK Ordering Information S X 040 K SMC Diode Solutions K:DPAK Sensitive gate SCRs IT(RMS):4A Device Package Shipping SX040K DPAK 2500pcs/ reel SX040KTR DPAK 2500pcs/ reel Marking Diagram Where XXXXX is YYWWL S X 040 K YY WW L = SMC = Sensitive gate SCRs = Forward Current 4A) = Package type = Year = Week = Lot Number  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SX040K Technical Data Data Sheet N2045, Rev.- Mechanical Dimensions DPAK SYMBOL Millimeters Min. A A2 B B2 C C2 2.10 0 0.66 5.18 0.40 0.44 D 5.90 D1 E E1 G H L L2 V1 V2 Typ. Inches Max. Min. 2.50 0.10 0.86 5.48 0.60 0.58 0.083 0 0.026 0.202 0.016 0.017 6.30 0.232 5.30REF 6.40 4.63 4.47 9.50 1.09 1.35 0° Max. 0.098 0.004 0.034 0.216 0.024 0.023 0.248 0.209REF 6.80 7° Typ. 4.67 10.70 1.21 1.65 0.252 0.182 0.176 0.374 0.043 0.053 6° 0° 0.268 7° 0.184 0.421 0.048 0.065 6° Ratings and Characteristics Curves FIG.1: Maximum power dissipation versus RMS on-state current P(w) 6 FIG.2: RMS on-state current versus case temperature 6 IT(RMS) (A) α=180° 5 4 TO-252-4R → 4 3 2 2 1 0 0 1 IT(RMS) (A) 2 3 4 5 FIG.3: Surge peak on-state current versus number of cycles 0 Tc (℃) 0 25 50 75 ITM (A) 40 ITSM (A) 40 tp=10ms One cycle Tj=Tjmax 30 100 FIG.4: On-state characteristics (maximum values) 10  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  20 1 125 α=180° 5 4 TO-252-4R → 4 SX040K 3 Technical Data 2 Data Sheet N2045, Rev.- 2 1 0 0 IT(RMS) (A) 2 3 1 4 5 FIG.3: Surge peak on-state current versus number of cycles 0 Tc (℃) 0 25 50 75 100 FIG.4: On-state characteristics (maximum values) 125 ITM (A) 40 ITSM (A) 40 tp=10ms One cycle Tj=Tjmax 10 30 20 1 Tj=25℃ 10 Number of cycles 0 1 10 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp