GTVA311801FA-V1

GTVA311801FA Thermally-Enhanced High Power RF GaN on SiC HEMT 180 W, 50 V, 2700 – 3100 MHz Description The GTVA311801FA is a 180-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2700 to 3100 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. GTVA311801FA Package H-36275-4 Features • GaN on SiC HEMT technology • Broadband internal input matching • Typical pulsed CW performance (class AB), 2700 – 3100 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 180 W - Drain efficiency = 65% - Gain (P3dB) = 15.5 dB • Capable of handling 10:1 VSWR @ 50 V, 150 W CW output power • Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001) • Pb-free and RoHS compliant RF Characteristics1 Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 20 mA, POUT(PEAK) = 180 W, ƒ = 3100 MHz, pulse width = 128 µs, duty cycle = 10% Characteristics Symbol Min Typ Max Units Gain Gps 13.5 15.5 – dB Drain Efficiency hD 56 60 – % Note 1: All published data at TCASE = 25°C unless otherwise indicated. Rev. 4, October 2020 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 2 GTVA311801FA DC Characteristics Characteristic Conditions Symbol Min Drain-source Breakdown Voltage VGS = –8 V, ID = 10 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V Gate Threshold Voltage VDS = 10 V, ID = 21 mA IDSS Typ Max Unit — — 8.32 mA VGS(th) –3.8 –3.0 –2.3 V Recommended Operating Conditions Parameter Conditions Operating Voltage Gate Quiescent Voltage VDS = 50 V, ID = 20 mA Symbol Min Typ Max Unit VDD 0 — 50 V VGS(Q) — –3.0 — V Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG 20 mA Drain Current ID 7.5 A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Chracteristics Parameter Thermal Resistance, Junction to Case (TCASE = 70°c, 150 W CW) Rev. 4, October 2020 Symbol Value Unit RqJC 1.16 °C/W 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 GTVA311801FA Electrical Characteristics When Tested in GTVA311801FA-V1 Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics1 (TC = 25˚C, F = 2.7 - 3.1 GHz unless otherwise noted) Output Power2 POUT – 52 – dBm VDD = 50 V, IDQ = 20 mA, PIN = 37 dBm Drain Efficiency2 η – 60 – % VDD = 50 V, IDQ = 20 mA, PIN = 37 dBm Gain2 G – 15 – dB VDD = 50 V, IDQ = 20 mA, PIN = 37 dBm 1 Measured in the GTVA311801FA-V1 Application Circuit 2 Pulsed 300 μs, 10% Duty Cycle Typical Performance of the GTVA311801FA-V1 Test conditions unless otherwise noted: VDD = 50 V, IDQ = 20 mA, PW = 300 us, DC = 10%, Operating Temp = +25 °C, PIN = 37 dBm Figure 2. Input Power vs Drain F2: Pin vs Drain Efficiency vs Efficiency as a Function of Frequency Frequency Figure 1.F1:Pin Input vs Power Gain as a Gain vs vs Frequency Function of Frequency 70 18.0 60 Drain Efficiency (%) 18.5 Gain (dB) 17.5 17.0 16.5 16.0 2.7 GHz 2.9 GHz 3.1 GHz 15.5 15.0 20 22 24 26 28 30 32 34 50 40 30 20 2.7 GHz 2.9 GHz 3.1 GHz 10 36 0 38 20 22 24 Figure 3. Input Power vs Output Power F3:asPin vs PoutofvsFrequency Frequency a Function 30 32 Gate Current (mA) 40 30 20 2.7 GHz 2.9 GHz 3.1 GHz -0.04 -0.06 -0.08 -0.10 -0.12 -0.14 22 24 26 28 30 32 Input Power (dBm) Rev. 4, October 2020 38 2.7 GHz 2.9 GHz 3.1 GHz -0.02 50 20 36 Frequency 0.00 10 34 Figure 4. vs Input Power vs Gate Current F4: Pin Peak Drain Current vs as a Function of Frequency 60 Output Power (dBm) 28 Input Power (dBm) Input Power (dBm) 0 26 34 36 38 20 22 24 26 28 30 32 34 36 38 Input Power (dBm) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 4 GTVA311801FA Typical Performance of the GTVA311801FA-V1 Test conditions unless otherwise noted: VDD = 50 V, IDQ = 20 mA, PW = 300 us, DC = 10%, Operating Temp = +25 °C, PIN = 37 dBm F5: Pin vs Peak Drain Current vs Figure 5. Input Power vs Peak Drain Frequency Current as a Function of Frequency Peak Drain Current (A) 7 6 5 4 3 2 2.7 GHz 2.9 GHz 3.1 GHz 1 0 20 22 24 26 28 30 32 34 Input Power (dBm) F6 Gain Vs Frequency Figure 6. Gain vs Frequency F7 Drain Efficiency Vs Drain Efficiency (%) 65 15 Gain (dB) 38 Figure 7. Drain Efficiency vs Frequency Frequency 16 14 13 12 36 2.6 2.7 2.8 2.9 3.0 3.1 60 55 50 3.2 2.6 2.7 3.0 3.1 3.2 F9 Peak Drain Current Vs Frequency F8 Output Power Figure 8. Output PowerVs vsFrequency Frequency Figure 9. Peak Drain Current vs Frequency 6.4 Peak Drain Current (A) 54 Output Power (dBm) 2.9 Frequency (GHz) Frequency (GHz) 53 52 51 50 2.8 2.6 2.7 2.8 2.9 3.0 Frequency (GHz) Rev. 4, October 2020 3.1 3.2 6.2 6.0 5.8 5.6 5.4 5.2 5.0 2.6 2.7 2.8 2.9 3.0 3.1 3.2 Frequency (GHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 5 GTVA311801FA Typical Performance of the GTVA311801FA-V1 Test conditions unless otherwise noted: VDD = 50 V, IDQ = 200 mA, Operating Temp = +25 °C, PIN = -20 dBm vs Frequency FigureF10 10.Gain S21 Wide Band-Gain vs Frequency Gain vs Frequency Figure 11.F11 S21 Narrow Band-Gain vs Frequency 30 25 20 20 10 15 -10 S21 (dB) S21 (dB) 0 -20 -30 -40 0 -10 -60 0 1 2 3 4 5 -15 6 2.3 2.5 3.1 3.3 3.5 3.7 3.9 F1313. Output RL vs Frequency Figure S22 Narrow Band RL vs Frequency 2 -4 -4 S22 (dB) 0 -2 -6 -8 -10 -6 -8 -10 -12 -12 -14 -14 0 1 2 3 4 5 -16 6 2.1 2.3 2.5 Frequency (GHz) 0 -2 -4 -4 -6 -6 S11 (dB) 0 -8 -10 -14 -14 -16 -16 4 Frequency (GHz) Rev. 4, October 2020 3.5 3.7 3.9 -8 -12 3 3.3 -10 -12 2 3.1 Figure 15. S11 Narrow Band RL vs Frequency -2 1 2.9 F15 Input RL vs Frequency F14 Input RL vs Frequency 0 2.7 Frequency (GHz) Figure 14. S11 Wide Band RL vs Frequency S11 (dB) 2.9 Figure 12. S22RLWide Band RL vs F12 Output vs Frequency Frequency 0 -18 2.7 Frequency (GHz) -2 -16 2.1 Frequency (GHz) 2 S22 (dB) 5 -5 -50 -70 10 5 6 -18 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 Frequency (GHz) 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 6 GTVA311801FA GTVA311801FA-V1 Application Circuit Schematic GTVA311801FA-V1 Application Circuit Rev. 4, October 2020 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 7 GTVA311801FA GTVA311801FA-V1 Application Circuit Bill of Materials Rev. 4, October 2020 Designator Description Qty R1 RES, 30 OHMs, +/- 1%, 0603 1 R2, RES, 5.6 OHMS, +/- 1%, 0603 1 C1,C2, C4, C8, C9 CAP, 10pF, 0805, ATC 600F 5 C3 CAP, .7pF, 0805, ATC, 600F 1 C5 CAP, 1uF, 0603, ATC 600S 1 C6, CAP, 10uF, 0603 4 C7 CAP, 1.6pF, 0805, ATC, 600F 1 C10 CAP, 1uF, +/- 10%, 100V, 1 C11 CAP, 3300uF 4 Baseplate 2.5” x 4”, CU, custom 1 W1 Wire, 3.25”, 18AWG 2 Q1 Transistor, GTVA311801FA 1 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 8 GTVA311801FA Pinout Diagram (top view) D S Pin Description D Drain G Gate S Source (flange) G H-37265J-2_03_pd_20 16-12-01-bn Package Outline Specifications Package H-37265J-2 2X 6.35 [.250] 45° X .64 [.025] D FLANGE 10.16 [.400] FLANGE 4X R0.63 [R.025] MAX SPH 1.57 [.062] 2X 2.59±.51 [.102±.020] LID (15.34 10.16±.25 [.604]) [.400±.010] CL G CL 10.16±.25 [.400±.010] 3.61±.38 [.142±.015] H-37265J-2_02_po_05-29-2015 1.02 [.040] 10.16 [.400] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D – drain; G – gate; S – source. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Rev. 4, October 2020 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 9 GTVA311801FA Product Ordering Information Order Number Description Unit of Measure GTVA311801FA-V1-R0 GaN HEMT, Tape & Reel, 50 pcs Each GTVA311801FA-V1-R2 GaN HEMT, Tape & Reel, 250 pcs Each LTN/GTVA311801FA V1 Test Board with GaN HEMT installed IFF, 2700 - 3100 MHz Each Rev. 4, October 2020 Image 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 10 GTVA311801FA For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/rf Sales Contact rfsales@cree.com Notes & Disclaimer Specifications are subject to change without notice. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. Cree products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. © 2019 - 2020 Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 4, October 2020 www.wolfspeed.com