C4D15120D
VRRM
Silicon Carbide Schottky Diode
1200 V
IF (TC=135˚C) = 24 A**
Z-Rec Rectifier
®
Qc = 74 nC**
Features
•
•
•
•
•
=
Package
1.2-KVolt Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on VF
Benefits
•
•
•
•
•
TO-247-3
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
•
•
•
•
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C4D15120D
TO-247-3
C4D15120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VDC
DC Blocking Voltage
1200
V
24.5/49
12/24
7.5/15
A
TC=25˚C
TC=135˚C
TC=157˚C
38*
25*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC-110˚C, tP=10 ms, Half Sine Pulse
Continuous Forward Current
(Per Leg/Device)
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
66*
49.5*
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
Fig. 8
IF,Max
Non-Repetitive Peak Forward Current
600*
480*
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
Fig. 8
Ptot
Power Dissipation(Per Leg/Device)
135/270
58.5/117
W
TC=25˚C
TC=110˚C
Fig. 4
200
V/ns
VR=0-960V
20.5*
12.25*
A2s
-55 to +175
˚C
1
8.8
Nm
lbf-in
dV/dt
∫i2dt
TJ, Tstg
Diode dV/dt ruggedness
i2t value
Operating Junction and Storage Temperature
TO-247 Mounting Torque
1
Test Conditions
VRRM
IF
*
Value
Per Leg, ** Per Device
C4D15120D Rev. D, 12-2017
TC=25˚C, tP=10 ms
TC=110˚C, tP=10 ms
M3 Screw
6-32 Screw
Electrical Characteristics (Per Leg)
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.2
1.8
3
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
Fig. 1
IR
Reverse Current
35
100
250
350
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
37
nC
VR = 800 V, IF = 8 A
di/dt = 200 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
560
37
27
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
10.5
μJ
VR = 800 V
Fig. 7
Note:This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
*
Parameter
Typ.
Max.
1.11
0.56**
*
Thermal Resistance from Junction to Case
Unit
Note
°C/W
Fig. 9
Per Leg, ** Per Device
Typical Performance
14
800
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
12
10
700
600
500
IR (μA)
IF (A)
8
6
400
300
4
200
2
100
0
0
0
0.5
1
1.5
2
2.5
VF (V)
Figure 1. Forward Characteristics
2
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
C4D15120D Rev. D, 12-2017
3
3.5
4
0
500
1000
1500
VR (V)
Figure 2. Reverse Characteristics
2000
Typical Performance (Per Leg)
90
160
80
140
70
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
50
100
PTot (W)
IF(peak) (A)
60
120
40
60
30
40
20
20
10
0
80
25
50
75
100
125
150
0
175
25
50
75
TC ˚C
100
125
150
175
TC ˚C
Figure 4. Power Derating
Figure 3. Current Derating
600
50
45
500
40
35
400
25
C (pF)
Qc (nC)
30
20
15
10
300
200
100
5
0
0
0
200
400
600
800
1000
0.1
VR (V)
Figure 5. Recovery Charge vs. Reverse Voltage
3
C4D15120D Rev. D, 12-2017
1
10
100
VR (V)
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
1000
1000
20.0
20
18.0
18
16.0
16
EC Capacitive
Energy (uJ)
C
14.0
14
IFSMIFSM
(A)(A)
E (mJ)
12.0
12
10.0
10
8.08
100
100
TJ = 25°C
TJ = 110°C
6.06
4.04
2.02
10
10
1E-05 1E-04 1E-03 1E-02
1.E-05
1.E-04
1.E-03
1.E-02
0.00
0 200 400 600 800 1000
0
200
400
600
800
1000
tp(s)
tp (s)
VR Reverse Voltage (V)
VR (V)
Figure 8. Non-repetitive Peak Forward Surge Current
vs. Pulse Duration (sinusoidal waveform), per leg
Figure 7. Typical Capacitance Stored Energy, per leg
1
Thermal Resistance (˚C/W)
0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
SinglePulse
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
t (sec)
10E-3
Figure 9. Device Transient Thermal Impedance
4
C4D15120D Rev. D, 12-2017
100E-3
1
Package Dimensions
ASE
Advanced
Package TO-247-3
Semiconductor
Engineering Weihai, Inc.
PACKAGE
OUTLINE
DWG NO.
98WHP03165A
ISSUE
O
DATE
Sep.05, 2016
e
POS
A
Inches
Millimeters
Min
Max
Min
Max
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b3
.113
.133
2.87
3.38
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
5.10
E2
.145
.201
3.68
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
5.44 BSC
L
.780
.800
L1
.161
.173
N
ØP
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
TITLE:
TO-247 3LD, Only For Cree
COMPANY
ASE Weihai
SHEET
1 OF 3
Recommended Solder Pad Layout
.138
4.10
4.40
3.51
3.65
.144
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
17.5° REF
W
3.5° REF
X
4° REF
Part Number
Package
Marking
C4D15120D
TO-247-3
C4D15120
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
C4D15120D Rev. D, 12-2017
20.32
3
all units are in inches
5
19.81
Diode Model
Diode Model CSD04060
Vf T = VT + If*RT
= V*T+If*R
T -3
VT= 0.965V+fT(T
j -1.3*10 )
RT= 0.096 + (Tj * 1.06*10-3) -3
VT = 0.96 + (TJ* -2.1*10 )
RT = 0.06+(TJ* 8.0*10-4)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/power/tools-and-support/product-ecology.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
•
•
•
Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2017 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C4D15120D Rev. D, 12-2017
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power