C3D08060G

C3D08060G Silicon Carbide Schottky Diode Z-Rec Rectifier ® Features • • • • • • • 600 V IF (TC=135˚C) = 11 A Q c 21 nC = Package 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF TO-263-2 Benefits • • • • • VRRM = Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway PIN 1 CASE PIN 2 Applications • • • • Switch Mode Power Supplies (SMPS) Boost diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Part Number Package Marking C3D08060G TO-263-2 C3D08060 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Test Conditions VRRM Repetitive Peak Reverse Voltage 600 V VRSM Surge Peak Reverse Voltage 600 V VDC DC Blocking Voltage 600 V 24 11 8 A TC=25˚C TC=135˚C TC=152˚C 36.5 25.5 A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IF Continuous Forward Current Note Fig. 3 IFRM Repetitive Peak Forward Surge Current IFSM Non-Repetitive Peak Forward Surge Current 71 60 A TC=25˚C, tp = 10 mS, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave Fig. 8 IFSM Non-Repetitive Peak Forward Surge Current 650 530 A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 107 46.5 W TC=25˚C TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-600V ∫i2dt i2t value 25 18 A2s -55 to +175 ˚C TJ , Tstg 1 Parameter Operating Junction and Storage Temperature C3D08060G Rev. H, 01-2018 TC=25˚C, tP=10 ms TC=110˚C, tP=10 ms Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.1 1.8 2.4 V IF = 8 A TJ=25°C IF = 8 A TJ=175°C Fig. 1 IR Reverse Current 8.5 17 42.5 170 μA VR = 600 V TJ=25°C VR = 600 V TJ=175°C Fig. 2 QC Total Capacitive Charge 20 nC VR = 400 V, IF = 8A di/dt = 500 A/μs TJ = 25°C Fig. 5 C Total Capacitance 395 37 32 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 3.0 μJ VR = 400 V Fig. 7 Note:This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance from Junction to Case Typ. Unit Note 1.4 °C/W Fig. 9 Typical Performance 20 30 18 TJ = -55 °C 25 14 Reverse Leakage Current, IRR (mA) TJ = 25 °C TJ = 75 °C 12 10 IR (mA) TJ = 125 °C TJ = 175 °C F FowardICurrent, (A) IF (A) 16 8 6 4 2 TJ = 175 °C TJ = 125 °C 15 TJ = 75 °C 10 TJ = 25 °C TJ = -55 °C 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 FowardVVoltage, (V) VF (V) F Figure 1. Forward Characteristics 2 20 C3D08060G Rev. H, 01-2018 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000 ReverseVVoltage, (V) VR (V) R Figure 2. Reverse Characteristics Typical Performance 80 120 10% Duty 20% Duty 30% Duty 50% Duty 70% Duty DC 70 50 80 PTot(W) (W) PTOT IF(peak) (A) IF (A) 60 100 40 30 60 40 20 20 10 0 25 50 75 100 125 150 0 175 25 T ˚C TCC(°C) 125 150 175 Figure 4. Power Derating 450 Conditions: TJ = 25 °C Ftest = 1 MHz Vtest = 25 mV 400 350 20 Capacitance C (pF)(pF) CapacitiveQCharge, (nC) QC (nC) C 100 C Conditions: TJ = 25 °C 25 75 ˚C TTC (°C) Figure 3. Current Derating 30 50 15 10 300 250 200 150 100 5 50 0 0 100 200 300 400 500 600 700 ReverseVVoltage, (V) VR (V) R Figure 5. Total Capacitance Charge vs. Reverse Voltage 3 C3D08060G Rev. H, 01-2018 0 0 1 10 100 (V) VR (V) ReverseVVoltage, R Figure 6. Capacitance vs. Reverse Voltage 1000 Typical Performance 1,000 8 6 IIFSM (A) (A) 5 FSM 4 C Capacitance StoredE Energy, µJ) (mJ) EC (µ 7 3 100 TJ_initial = 25 °C TJ_initial = 110 °C 2 1 0 0 100 200 300 400 500 600 10 10E-6 700 ReverseVVoltage, (V) VR (V) 0.5 0.3 0.1 100E-3 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 T (Sec) 10E-3 Figure 9. Transient Thermal Impedance 4 C3D08060G Rev. H, 01-2018 10E-3 Figure 8. Non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) Figure 7. Capacitance Stored Energy Thermal Resistance (˚C/W) 1E-3 tp (s) Time, tp (s) R 1 100E-6 100E-3 1 Package Dimensions Package TO-263-2 POS Inches Millimeters Min Max Min Max A 0.17 0.18 4.32 4.57 A1 - 0.01 - 0.25 b 0.028 0.037 0.71 0.94 b2 0.045 0.055 1.15 1.4 c 0.014 0.025 0.356 0.635 c2 0.048 0.055 1.22 1.4 D 0.35 0.37 8.89 9.4 D1 0.255 0.324 6.48 8.23 10.28 E 0.395 0.405 10.04 E1 0.31 0.318 7.88 8.08 e 0.1 BSC. 2.54 BSC. L 0.58 0.62 14.73 15.75 L1 0.09 0.11 2.29 2.79 L2 0.045 0.055 1.15 1.39 L3 0.05 0.07 1.27 1.77 q 0° 8° 0° 8° Note: Tab “M” may not be present PIN 1 M CASE PIN 2 Recommended Solder Pad Layout 15.990 8.890 10.668 3.556 1.540 2.540 Tjb May 2015 MX+DI TO-263-2 Part Number Package Marking C3D08060G TO-263-2 C3D08060 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering 5 C3D08060G Rev. H, 01-2018 Diode Model Diode Model CSD10060 Vf Vf T T==VTV+T+If*R If*RT T V -3 -3) 0.95+(T * -1.2*10 VTT==0.92 + (Tj * J-1.35*10 ) -4 -3 R 0.054+(T J* 5.5*10 RT =0.052 + (T * 0.29*10 ) ) T= j Note: Tj = Diode Junction Temperature In Degrees Celsius valid from 25°C to 175°C VT RT Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Related Links • • • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2 SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 6 C3D08060G Rev. H, 01-2018 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power