SICRF10650

SICR10650 SICRF10650 Technical Data Data Sheet N1942, Rev.A SICR10650 SICRF10650 650V SIC POWER SCHOTTKY RECTIFIER Features Description SICR10650/ SICRF10650 are all single SiC Schottky rectifiers packaged in TO-220AC, ITO-220AC case. The device is a high voltage Schottky rectifier that has very low total conduction losses and very stable switching characteristics over temperature extremes. The SICR12600/ SICRF12600 are ideal for energy sensitive, high frequency applications in challenging environments.        Applications         175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Guard ring for enhanced ruggedness and long term reliability Pb − Free Device All SMC parts are traceable to the wafer lot Additional electrical and life testing can be performed upon request Alternative energy inverters Power Factor Correction (PFC) Free-Wheeling diodes Switching supply output rectification Reverse polarity protection SICR10650 SICRF10650 TO-220AC ITO-220AC Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR - 650 V Average Rectified Forward Current IF (AV) 50% duty cycle @Tc=150°C, rectangular wave form 10 A Peak One Cycle Non-Repetitive Surge Current IFSM 8.3ms, Half Sine pulse, TC = 25 C 110 A  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR10650 SICRF10650 Technical Data Data Sheet N1942, Rev.A Electrical Characteristics: Characteristics Forward Voltage Drop* Reverse Current at DC condition* Reverse Current * Symbol VF1 VF2 IR1 IR2 Junction Capacitance Voltage Rate of Change * Pulse width < 300 µs, duty cycle < 2% CT dv/dt Condition Typ. Max. Units @ 10A, Pulse, TJ = 25 C 1.51 1.7 V @ 10A, Pulse, TJ = 175 C @VR = rated VR TJ = 25 C @VR = rated VR TJ = 175 C @VR = 0V, TC = 25 C, fSIG = 1MHz @VR = 200V, TC = 25 C, fSIG = 1MHz @VR = 400V, TC = 25 C, fSIG = 1MHz - 1.75 2.5 V 25 100 A 32 200 A 695 73 70 - 740 78 75 10,000 pF V/s Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Approximate Weight Case Style Tube Specification Symbol Condition Specification Units TJ Tstg RJC - -55 to +175 -55 to +175 C C 1.36 C/W 1.8 g wt DC operation - TO-220AC Marking Diagram Where XXXXX is YYWWL SICR F 10 650 SSG YY WW L = Device Type = Package type = Forward Current (10A) = Reverse Voltage (650V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR10650 SICRF10650 Technical Data Data Sheet N1942, Rev.A Ratings and Characteristics Curves Fig.1-Typical Forward Voltage Characteristics Fig.3-Forward Current Derating Curve Fig.2-Typical Reverse Characteristics Fig.4-Typical Junction Capacitance  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  SICR10650 SICRF10650 Technical Data Data Sheet N1942, Rev.A Mechanical Dimensions TO-220AC Symbol A A1 A2 b b1 c D D1 E E1 e1 H1 L L1 ΦP Q Θ1 Θ2 Θ3 Dimensions in millimeters Min. 4.40 1.17 2.40 0.61 1.17 0.31 14.64 8.50 10.00 9.98 4.95 6.04 13.00 3.50 3.74 2.54 Typical 4.70 1.27 2.69 0.81 1.27 0.38 14.94 8.07 10.16 10.18 5.08 6.24 13.86 3.80 3.84 2.74 5° 4° 4° Max. 4.85 1.37 2.89 0.96 1.37 0.70 15.75 8.90 10.40 10.38 5.18 6.60 14.08 3.96 4.04 2.95 Ordering Information ] Device SICR10650 Package TO-220AC Plating Pure Sn Weight 1.8g Shipping 50pcs / tube SICRF10650 ITO-220AC Pure Sn 1.8g 50pcs / tube For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification.  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com  Technical Data Data Sheet N1942, Rev.A SICR10650 SICRF10650 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com - sales@ smc-diodes.com 