SiT9387
AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Features
◼
◼
◼
◼
◼
◼
Applications
AEC-Q100 Grade 2 temperature range (-40°C to 105°C).
Grade 3 and Grade 4 also available
Any frequency between 220.000001 MHz and 725 MHz,
accurate to 6 decimal places. For HCSL output signaling,
maximum frequency is 500 MHz – contact SiTime for higher
frequency options. For frequency between 1 and 220 MHz,
see SiT9386
LVPECL, LVDS and HCSL output signaling
Frequency stability as low as ±10 ppm – contact SiTime
0.23 ps RMS (typ) phase jitter (random, 12 kHz to 20 MHz)
Industry-standard packages: 3.2 x 2.5, 7.0 x 5.0 mm.
Contact SiTime for 5.0 x 3.2 mm package
◼
◼
100 Gbps Ethernet, SONET, SATA, SAS,
Fibre Channel
Telecom, networking, instrumentation, storage, servers
Electrical Characteristics
Table 1. Electrical Characteristics – Common to LVPECL, LVDS and HCSL
All Min and Max limits in the Electrical Characteristics tables are specified over temperature and rated operating voltage wi th
standard output termination show in the termination diagrams. Typical values are at 25°C and nominal supply voltage.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
220.000001
–
725
MHz
Accurate to 6 decimal places
Frequency Stability
Frequency Stability
First Year Aging
F_aging1
-10
–
+10
ppm
Inclusive of initial tolerance, operating temperature, rated
power supply voltage and load variations.
Contact SiTime for ±10 ppm
-20
–
+20
ppm
-25
–
+25
ppm
Inclusive of initial tolerance, operating temperature, rated
power supply voltage and load variations
-50
–
+50
ppm
–
±1
–
ppm
At 25°C
Temperature Range
Operating Temperature Range
T_use
-20
–
+70
°C
AEC-Q100 Grade 4
-40
–
+85
°C
AEC-Q100 Grade 3
-40
–
+105
°C
AEC-Q100 Grade 2
Supply Voltage
Supply Voltage
Vdd
2.97
3.30
3.63
V
2.70
3.00
3.30
V
2.52
2.80
3.08
V
2.25
2.50
2.75
V
Input Characteristics
Input Voltage High
VIH
70%
–
–
Vdd
Pin 1, OE
Input Voltage Low
VIL
–
–
30%
Vdd
Pin 1, OE
Input Pull-up Impedance
Z_in
–
100
-
kΩ
Pin 1, OE logic high or logic low
Output Characteristics
Duty Cycle
DC
45
–
55
%
Startup and OE Timing
Startup Time
OE Enable/Disable Time
Rev 1.01
T_start
–
–
T_oe
–
–
3.0
ms
Measured from the time Vdd reaches its rated minimum
value
3.8
µs
F = 322.265625 MHz. Measured from the time OE pin
reaches rated VIH and VIL to the time clock pins reach
90% of swing and high-Z. See Figure 6 and Figure 7
9 March 2021
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Table 2. Electrical Characteristics – LVPECL Specific
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Current Consumption
Idd
–
–
94
mA
Excluding Load Termination Current, Vdd = 3.3 V or 2.5 V
OE Disable Supply Current
I_OE
–
–
63
mA
OE = Low
Output Disable Leakage Current
I_leak
–
0.15
–
A
OE = Low
I_driver
–
–
33
mA
Maximum average current drawn from OUT+ or OUT-
Current Consumption
Maximum Output Current
Output Characteristics
Output High Voltage
VOH
Vdd-1.15
–
Vdd-0.7
V
See Figure 2
Output Low Voltage
VOL
Vdd-2.0
–
Vdd-1.5
V
See Figure 2
V_Swing
1.2
1.6
2.0
V
See Figure 3
Tr, Tf
–
225
330
ps
20% to 80%, see Figure 3
Output Differential Voltage Swing
Rise/Fall Time
Jitter – 7.0 x 5.0 mm package
RMS Period Jitter[1]
T_jitt
–
1.0
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
RMS Phase Jitter (random)
T_phj
–
0.220
0.270
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature ranges -20 to 70ºC and -40 to 85ºC
–
0.220
0.300
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature range -40 to 105ºC
–
0.1
–
ps
f = 156.25 or 322.265625 MHz, IEEE802.3-2005 10GbE
jitter mask integration bandwidth = 1.875 MHz to 20 MHz,
includes spurs, all Vdd levels
Jitter – 3.2 x 2.5 mm package
RMS Period Jitter
T_jitt
–
1.0
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
T_phj
–
0.225
0.282
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature ranges -20 to 70ºC and -40 to 85ºC
–
0.225
0.315
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature range -40 to 105ºC
–
0.1
–
ps
f = 322.265625 MHz, IEEE802.3-2005 10GbE jitter mask
integration bandwidth = 1.875 MHz to 20 MHz, Includes
spurs, all Vdd levels
[1]
RMS Phase Jitter (random)
Notes:
1. Measured according to JESD65B.
Rev 1.01
Page 2 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Table 3. Electrical Characteristics – LVDS Specific
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Current Consumption
Current Consumption
Idd
–
–
85
mA
Excluding Load Termination Current, Vdd = 3.3 V or 2.5 V
OE Disable Supply Current
I_OE
–
–
63
mA
OE = Low
Output Disable Leakage Current
I_leak
–
0.15
–
A
OE = Low
Output Characteristics
VOD
250
–
530
mV
See Figure 4
ΔVOD
–
–
50
mV
See Figure 4
VOS
1.125
–
1.375
V
See Figure 4
VOS Magnitude Change
ΔVOS
–
–
50
mV
See Figure 4
Rise/Fall Time
Tr, Tf
–
370
505
ps
Measured with 2 pF capacitive loading to GND,
20% to 80%, see Figure 5
RMS Period Jitter[2]
T_jitt
–
0.92
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
RMS Phase Jitter (random)
T_phj
–
0.215
0.265
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature ranges -20 to 70ºC and -40 to 85ºC
–
0.215
0.280
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature range -40 to 105ºC
–
0.1
–
ps
f = 322.265625 MHz, IEEE802.3-2005 10GbE jitter mask
integration bandwidth = 1.875 MHz to 20 MHz, Includes
spurs, all Vdd levels
Differential Output Voltage
VOD Magnitude Change
Offset Voltage
Jitter – 7.0 x 5.0 mm package
Jitter – 3.2 x 2.5 mm package
RMS Period Jitter[2]
T_jitt
–
0.92
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
RMS Phase Jitter (random)
T_phj
–
0.235
0.282
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs. Temperature
ranges -20 to 70ºC and -40 to 85ºC.
–
0.235
0.310
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature range -40 to 105ºC
–
0.1
–
ps
f = 322.265625 MHz, IEEE802.3-2005 10GbE jitter mask
integration bandwidth = 1.875 MHz to 20 MHz, Includes
spurs, all Vdd levels
Notes:
2. Measured according to JESD65B.
Rev 1.01
Page 2 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Table 4. Electrical Characteristics – HCSL Specific
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Current Consumption
Current Consumption
Idd
–
–
97
mA
Excluding Load Termination Current, Vdd = 3.3 V or 2.5 V
OE Disable Supply Current
I_OE
–
–
63
mA
OE = Low
Output Disable Leakage Current
I_leak
–
0.15
–
A
OE = Low
I_driver
–
–
35
mA
Maximum average current drawn from OUT+ or OUT-
Maximum Output Current
Output Characteristics
Output High Voltage
VOH
0.60
–
0.90
V
See Figure 2
Output Low Voltage
VOL
-0.05
–
0.08
V
See Figure 2
V_Swing
1.2
1.4
1.9
V
See Figure 3
Rise/Fall Time
Tr, Tf
–
360
505
ps
Measured with 2 pF capacitive loading to GND,
20% to 80%, see Figure 3
RMS Period Jitter[3]
T_jitt
–
1.0
1.6
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
RMS Phase Jitter (random)
T_phj
–
0.215
0.265
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature ranges -20 to 70ºC and -40-85ºC
–
0.215
0.282
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature range -40 to 105ºC
–
0.1
–
ps
f = 322.265625 MHz, IEEE802.3-2005 10GbE jitter mask
integration bandwidth = 1.875 MHz to 20 MHz, Includes
spurs, all Vdd levels
Output Differential Voltage Swing
Jitter – 7.0 x 5.0 mm package
Jitter – 3.2 x 2.5 mm package
RMS Period Jitter[3]
T_jitt
–
1.0
1.6
T_phj
–
0.235
0.282
ps
ps
f = 100, 156.25 or 212.5 MHz, Vdd = 3.3 V or 2.5 V
RMS Phase Jitter (random)
–
0.235
0.305
ps
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature range -40 to 105ºC
–
0.1
–
ps
f = 322.265625 MHz, IEEE802.3-2005 10GbE jitter mask
integration bandwidth = 1.875 MHz to 20 MHz, Includes
spurs, all Vdd levels
f = 322.265625 MHz, Integration bandwidth = 12 kHz to
20 MHz, all Vdd levels, includes spurs.
Temperature ranges -20 to 70ºC and -40 to 85ºC.
Notes:
3. Measured according to JESD65.
Rev 1.01
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Table 5. Pin Description
Pin
1
Map
Top View
Functionality
OE/NC
[4]
Output Enable
(OE)
H : specified frequency output
L: output is high impedance
Non Connect
(NC)
H or L or Open: No effect on output frequency or other device
functions
OE/NC
1
6
VDD
NC
2
5
OUT-
GND
3
4
OUT+
No Connect; Leave it floating or connect to GND for better
heat dissipation
2
NC
NA
3
GND
Power
Vdd Power Supply Ground
4
OUT+
Output
Oscillator output
5
OUT-
Output
Complementary oscillator output
6
Vdd
Power
Power supply voltage[5]
Figure 1. Pin Assignments
Notes:
4. In OE mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven.
5. A capacitor of value 0.1 µF or higher between Vdd and GND is required. An additional 10 µF capacitor between Vdd and GND is required for the
best phase jitter performance.
Table 6. Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
Max.
Unit
-0.5
4.0
V
Vdd + 0.3V
V
150
ºC
Maximum Junction Temperature
130
ºC
Soldering Temperature (follow standard Pb-free soldering guidelines)
260
ºC
Vdd
VIH
VIL
-0.3
Storage Temperature
-65
V
Table 7. Thermal Considerations[6]
Package
JA, 4 Layer Board (°C/W)
JC, Bottom (°C/W)
3225, 6-pin
80
30
7050, 6-pin
52
19
Notes:
6. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Table 8. Maximum Operating Junction Temperature[7]
Max Operating Temperature (ambient)
Maximum Operating Junction Temperature
70°C
95°C
85°C
110°C
105°C
130°C
Notes:
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 9. Environmental Compliance
Test Conditions
Value
Unit
Mechanical Shock Resistance
Parameter
MIL-STD-883F, Method 2002
10,000
g
Mechanical Vibration Resistance
MIL-STD-883F, Method 2007
70
g
Soldering Temperature (follow standard Pb free soldering guidelines)
MIL-STD-883F, Method 2003
260
°C
Moisture Sensitivity Level
MSL1 @ 260°C
Electrostatic Discharge (HBM)
HBM, JESD22-A114
2,000
V
Charge-Device Model ESD Protection
JESD220C101
750
V
Latch-up Tolerance
Rev 1.01
JESD78 Compliant
Page 4 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Waveform Diagrams
OUT-
VOH
OUT+
VOL
GND
Figure 2. LVPECL/HCSL Voltage Levels per Differential Pin (OUT+/OUT-)
V
80%
80%
V_ Swing
0V
t
20%
20%
Tr
Tf
Figure 3. LVPECL/HCSL Voltage Levels across Differential Pair
Rev 1.01
Page 5 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Waveform Diagrams (continued)
OUT-
VOD
OUT+
VOS
GND
Figure 4. LVDS Voltage Levels per Differential Pin (OUT+/OUT-)
V
80%
80%
0V
t
20%
20%
Tr
Tf
Figure 5. LVDS Differential Waveform
Timing Diagrams
Vdd
OE Voltage
Vdd
VIH
VIL
T_oe_hw
OE Voltage
T_oe_hw
OUT-
OUT-
90%
HZ
HZ
OUT+
OUT+
GND
GND
Figure 6. Hardware OE Enable Timing
Rev 1.01
Figure 7. Hardware OE Disable Timing
Page 6 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Termination Diagrams
LVPECL
OUT+
Shunt Bias Termination
network
0.1μF
Zo = 50Ω
D+
OUT-
Zo = 50Ω
D-
LVPECL
0.1μF
RB
RB
VDD
50 Ω
50 Ω
RB
3.3 V 100 Ω
VT
2.5 V 48.7 Ω
Figure 8. LVPECL with AC-coupled termination
VDD
Thevenin-equivalent
Termination network
R1
LVPECL
R1
OUT+
Zo = 50Ω
D+
OUT-
Zo = 50Ω
D-
VDD
R1
R2
R2
3.3 V 127 Ω
82.5 Ω
2.5 V 250 Ω
62.5 Ω
R2
Figure 9. LVPECL DC-coupled load termination with Thevenin equivalent network
Y-Bias Termination
network
LVPECL
OUT+
Zo = 50Ω
D+
OUT-
Zo = 50Ω
D-
R1
VDD
R1
R2
R3
3.3 V
50 Ω
50 Ω
50 Ω
2.5 V
50 Ω
50 Ω
18 Ω
C1
0.1μF
R2
R3
Figure 10. LVPECL with Y-Bias termination
OUT+
Shunt Bias Termination
network
Zo = 50Ω
D+
OUT-
Zo = 50Ω
D-
LVPECL
50 Ω
50 Ω
VT=VDD-2V
Figure 11. LVPECL with DC-coupled parallel shunt load termination
Rev 1.01
Page 7 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Termination Diagrams (continued)
LVDS
LVDS
Zo = 50Ω
OUT+
OUT+
100 Ω
Zo = 50Ω
OUT-
OUT-
Figure 12. LVDS single DC termination at the load
LVDS
0.1μF
Zo = 50Ω
OUT+
OUT+
100 Ω
100 Ω
0.1μF
Zo = 50Ω
OUT-
OUT-
Figure 13. LVDS double AC termination with capacitor close to the load
LVDS
Zo = 50Ω
OUT+
OUT+
100 Ω
100 Ω
Zo = 50Ω
OUT-
OUT-
Figure 14. LVDS double DC termination
HCSL
R1
OUT+
OUT-
Zo = 50Ω
D+
Zo = 50Ω
D-
R2
50Ω
50Ω
R1 = R2 = 33 Ω
Figure 15. HCSL interface termination
Rev 1.01
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[8]
Recommended Land Pattern (Unit: mm)[9]
3.2 x 2.5 x 0.85 mm
3.2 x 2.5 x 0.85 mm
1.00
1.6
2.25
0.65
7.0 x 5.0 x 0.85 mm[10]
1.05
7.0 x 5.0 x 0.85 mm[10]
Notes:
8. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of
the device.
9. A capacitor of value 0.1 µF or higher between Vdd and GND is required. An additional 10 µF capacitor between Vdd and GND is required for the best
phase jitter performance
10. The center pad has no electrical function. Soldering down the center pad to the GND is recommended for best thermal dissipation, but is optional.
Rev 1.01
Page 9 of 12
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Ordering Information
SiT9387AC - 1B1-33E 322.265625T
Packaging
Part Family
“T”, “Y”, “D” or “E”
Refer to table below for packing method
[13]
Leave Blank for Bulk
“SiT9387”
Revision Letter
“A” is the revision of Silicon
Frequency
220.000001 to 725 MHZ for LVDS and
LVPECL output drivers
Temperature Range
220.000001 to 500 MHz for HCSL driver
“C”: Extended Commercial, -20 to 70°C
“I”: Industrial, -40 to 85°C
“E”: Extended Industrial, -40 to 105°C
[14]
Feature Pin
“N”: No Connect
“E”: Output Enable
Signalling Type
“1”: LVPECL
“2”: LVDS
“4”: HCSL
Voltage Supply
Package Size
“25”: 2.5 V ±10%
“28”: 2.8 V ±10%
“30”: 3.0 V ±10%
“33”: 3.3 V ±10%
[11]
“B”: 3.2 x 2.5 mm
“E”: 7.0 x 5.0 mm with center pad
Frequency Stability
“F”:
“1”:
“2”:
“3”:
±10 ppm
±20 ppm
±25 ppm
±50 ppm
[12]
Notes:
11. Contact SiTime for 5.0 x 3.2 mm package.
12. Contact SiTime for ±10 ppm option.
13. Bulk is available for sampling only.
14. Contact SiTime for higher frequency HCSL options.
Table 10. Ordering Codes for Supported Tape & Reel Packing Method
Device Size
(mm x mm)
8 mm T&R
(3ku)
8 mm T&R
(1ku)
12 mm T&R
(3ku)
12 mm T&R
(1ku)
7.0 x 5.0
—
—
—
—
3.2 x 2.5
D
E
Rev 1.01
Page 10 of 12
16 mm T&R
(3ku)
16 mm T&R
(1ku)
T
Y
—
—
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SiT9387 AEC-Q100, 220 to 725 MHz Ultra-low Jitter Differential Oscillator
Table 11. Additional Information
Document
Description
Download Link
ECCN #: EAR99
Five character designation used on the
commerce Control List (CCL) to identify dual
use items for export control purposes.
—
Part number Generator
Tool used to create the part number based on
desired features.
https://www.sitime.com/part-number-generator
Manufacturing Notes
Tape & Reel dimension, reflow profile and
other manufacturing related info
https://www.sitime.com/sites/default/files/gated/Manufacturing-Notes-for-SiTimeProducts.pdf
Qualification Reports
RoHS report, reliability reports,
composition reports
http://www.sitime.com/support/quality-and-reliability
Performance Reports
Additional performance data such as phase
noise, current consumption and jitter for
selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination Techniques
Termination design recommendations
http://www.sitime.com/support/application-notes
Layout Techniques
Layout recommendations
http://www.sitime.com/support/application-notes
Table 12 .Revision History
Revision
Release Date
Change Summary
0.1
11-Mar-2017
Initial draft
0.87
6-Nov-2017
Updated package drawings
Corrected tape/reel ordering information
Updated Electrical Characteristics based on characterization
Added additional information table
Corrected formatting issues
added temperature range to 105ºC
Changed ±10 ppm to “contact SiTime”
Updated termination diagrams
Lower mechanical shock from 20,000 to 10,000 g
0.90
24-Nov-2017
Ordering information updates and page layout changes
1.0
15-Mar-2019
Updated Electrical Characteristics tables
Updated waveform diagrams
Added OE enable/disable timing diagrams
Updated package dimensions
Added an AEC-Q100 Grade 4 temperature option
Updated the ordering information
1.01
9-Mar-2021
Updated L1 and Dimple Width package dimensions for 3.2 x 2.5 mm package
Updated hyperlinks and changed rev table date format
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