DS110W

山东晶导微电子有限公司 DS12W THRU DS120W Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0 A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: DS12W ---S12 DS14W ---S14 DS16W ---S16 DS18W ---S18 DS110W ---S110 DS112W ---S112 DS115W ---S115 DS120W ---S120 Simplified outline SOD-123FL and symbol MECHANICAL DATA • Case: SOD-123FL • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:15mg 0.00048oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter DS12W DS14W DS16W DS18W DS110W DS112W DS115W DS120W Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 1.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 30 A Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance Typical Thermal Resistance （1） VF 0.55 0.3 10 IR Cj 110 （2） Operating Junction Temperature Range Storage Temperature Range 0.70 0.85 0.90 V 0.2 5 0.1 2 mA 80 pF RθJA 100 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.01 SOD123FL-S-DS12W~DS120W-1A200V Page 1 of 3 山东晶导微电子有限公司 DS12W THRU DS120W Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =100°C 10 2 T J =25°C 10 1 10 0 0 80 100 Fig.4 Typical Junction Capacitance 500 10 1.0 DS12W/DS14W DS16W/DS18W DS110W/DS112W DS115W/DS120W 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 DS12W/DS14W 20 DS16W-DS120W 10 1.8 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance DS12W-DS18W DS110W-DS120W 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 1 T J =25°C 200 Instaneous Forward Voltage (V) 50 00 Junction Capacitance ( pF) 20 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) 60 Percent of Rated Peak Reverse Voltage（%） Case Temperature (°C) 1000 100 10 Number of Cycles at 60Hz 2016.01 40 20 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 DS12W THRU DS120W Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL ∠ALL ROUND C A ∠ALL ROUND VM D E A g Top View mil Bottom View A C D E e g HE max 1.1 0.20 2.9 1.9 1.1 0.9 3.8 min 0.9 0.12 2.6 1.7 0.8 0.7 3.5 max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138 UNIT mm 1.2 (47) 1.2 (47) 2.0 (79) Marking Unit： mm (mil) 2016.01 ∠ 7° The recommended mounting pad size 1.2 (47) g pad e E A pad HE XTH601152A8 Type number Marking code DS12W S12 DS14W S14 DS16W S16 DS18W S18 DS110W S110 DS112W S112 DS115W S115 DS120W S120 Page 3 of 3