S9014

S9014 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to S9015 1．BASE 2．EMITTER 3．COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter value units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100µA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 µA Collector cut-off current ICEO VCE=35V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA DC current gain hFE VCE=5V, IC= 1mA 450 200 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100 mA, 1 V Transition frequency fT VCE=5V, B= 5mA IC= 10mA 150 MHz f=30MHz Page 1 of 3 5/30/2011 Page 2 of 3 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011