PBLS2003D,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PBLS2003D 20 V PNP BISS loadswitch Rev. 02 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features n n n n n Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications n n n n Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current (DC) RCEsat collector-emitter saturation resistance open base IC = −1 A; IB = −100 mA [1] - - −20 V - - −1 A - 185 280 mΩ - - 50 V TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage IO output current - - 100 mA R1 bias resistor 1 (input) 7 10 13 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02 open base PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 emitter TR1 2 base TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 collector TR1 6 5 4 1 2 3 Symbol 6 5 R1 4 R2 TR2 TR1 1 2 3 sym036 3. Ordering information Table 3. Ordering information Type number PBLS2003D Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PBLS2003D F8 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit open emitter - −20 V TR1; PNP low VCEsat transistor VCBO collector-base voltage VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector - −5 V IC collector current (DC) - −1 A ICM peak collector current - −2 A IB base current (DC) - −0.3 A IBM peak base current tp ≤ 300 µs - −0.6 A total power dissipation Tamb ≤ 25 °C [1] - 250 mW [2] - 350 mW [3] - 400 mW Ptot tp ≤ 300 µs PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 2 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit - 50 V TR2; NPN resistor-equipped transistor VCBO collector-base voltage open emitter VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative - −10 V IO output current - 100 mA ICM peak collector current tp ≤ 300 µs total power dissipation Tamb ≤ 25 °C Ptot - 100 mA [1] - 200 mW [1] - 400 mW [2] - 530 mW [3] - 600 mW Per device total power dissipation Ptot Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa414 0.8 Ptot (W) (1) 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 3 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 315 K/W [2] - - 236 K/W [3] - - 210 K/W Per device Rth(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa415 103 duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 10 1 0.02 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 4 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 006aaa463 103 Zth(j-a) (K/W) δ=1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa464 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 2 10 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 5 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit VCB = −20 V; IE = 0 A - - −0.1 µA VCB = −20 V; IE = 0 A; Tj = 150 °C - - −50 µA TR1; PNP low VCEsat transistor ICBO collector-base cut-off current ICES collector-emitter cut-off current VCE = −20 V; VBE = 0 V - - −0.1 µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −0.1 µA hFE DC current gain VCE = −2 V; IC = −1 mA 220 495 - VCE = −2 V; IC = −100 mA VCEsat collector-emitter saturation voltage 220 440 - VCE = −2 V; IC = −500 mA [1] 220 310 - VCE = −2 V; IC = −1 A [1] 155 220 - VCE = −2 V; IC = −2 A [1] 60 120 - IC = −100 mA; IB = −1 mA - −55 −90 mV IC = −500 mA; IB = −50 mA [1] - −100 −150 mV IC = −1 A; IB = −50 mA [1] - −200 −300 mV IC = −1 A; IB = −100 mA [1] - −185 −280 mV - 185 280 mΩ RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA [1] VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA [1] - −0.95 −1.1 V IC = −1 A; IB = −100 mA [1] - −1 −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A [1] - −0.85 −1.1 V td delay time - 8 - ns tr rise time IC = −1 A; IBon = −50 mA; IBoff = 50 mA - 34 - ns ton turn-on time - 42 - ns ts storage time - 140 - ns tf fall time - 45 - ns toff turn-off time - 185 - ns fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 185 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 15 20 pF PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 6 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 µA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 400 hFE DC current gain VCE = 5 V; IC = 5 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA - 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 10 mA 2.5 1.8 - V R1 bias resistor 1 (input) 7 10 13 kΩ R2/R1 bias resistor ratio Cc collector capacitance [1] VCB = 10 V; IE = ie = 0 A; f = 1 MHz 1 1.2 - 2.5 pF Pulse test: tp ≤ 300 µs; δ ≤ 0.02 PBLS2003D_2 Product data sheet 0.8 - © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 7 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 006aaa416 1000 hFE 006aaa417 −1 VCEsat (V) 800 (1) −10−1 600 (1) (2) (3) (2) 400 −10−2 (3) 200 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 VCE = −2 V −1 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 5. −10 TR1 (PNP): DC current gain as a function of collector current; typical values 006aaa418 −1.0 Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa419 −1.2 VBEsat (V) VBE (V) −0.8 (1) −1.0 (2) −0.8 (1) (2) −0.6 −0.6 (3) −0.4 (3) −0.4 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −5 V −1 (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. −103 −104 IC (mA) TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS2003D_2 Product data sheet −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 8 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 006aaa420 −2.0 −11.7 mA −10.4 mA −9.1 mA −7.8 mA IB = −13 mA IC (A) −1.6 006aaa421 102 RCEsat (Ω) −6.5 mA −5.2 mA −1.2 10 −3.9 mA −2.6 mA −0.8 1 (1) (2) (3) −1.3 mA −0.4 −0 −0 −2 −4 −6 10−1 −10−1 −1 −10 −102 VCE (V) Tamb = 25 °C −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa422 −1 Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa423 103 RCEsat (Ω) VCEsat (V) 102 −10−1 10 (1) (2) −10−2 1 (3) (1) (2) (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C 10−1 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (1) IC/IB = 100 (2) IC/IB = 50 (2) IC/IB = 50 (3) IC/IB = 10 (3) IC/IB = 10 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS2003D_2 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 9 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 006aaa034 103 (1) (2) (3) hFE 006aaa035 1 VCEsat (V) 102 (1) (2) (3) 10−1 10 1 10−1 1 102 10 10−2 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 006aaa036 10 102 10 IC (mA) Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa037 10 VI(off) (V) VI(on) (V) (1) (2) (1) (3) 1 (2) 1 (3) 10−1 10−1 1 102 10 10−1 10−2 10−1 IC (mA) 10 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values PBLS2003D_2 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 10 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 17. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 IC = −1 A; IBon = −50 mA; IBoff = 50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω Fig 18. Test circuit for switching times PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 11 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBLS2003D Package SOT457 Description 3000 10000 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165 [1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping PBLS2003D_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 12 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 20. Reflow soldering footprint 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 21. Wave soldering footprint PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 13 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBLS2003D_2 20090827 Product data sheet - PBLS2003D_1 Modifications: PBLS2003D_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 21 “Wave soldering footprint”: updated 20050624 Product data sheet PBLS2003D_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 14 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBLS2003D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 27 August 2009 15 of 16 PBLS2003D NXP Semiconductors 20 V PNP BISS loadswitch 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information. . . . . . . . . . . . . . . . . . . . . 15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 27 August 2009 Document identifier: PBLS2003D_2