TDM3482C

Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3482C DESCRIPTION The TDM3482C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES     RDS(ON) < 8.5mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V High Power and current handling capability Lead free product is available Surface Mount Package Application    PWM applications Load switch Power management PPAK-3*3-8 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Limit Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS +20 V ID（TC=25℃） 50 A 33 A Drain Current @ Current-Pulsed (Note 2) ID（TC=100℃） IDM 125 A Maximum Power Dissipation (Note 3) PD（TC=25℃） 39 W Maximum Operating Junction Temperature TJ 150 ℃ Storage Temperature Range TSTG -55 To 150 ℃ Drain Current @ Continuous (Note 1) THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1) Thermal Resistance-Junction to Case (Note 1) March 29, 2021 RθJA（Steady State） 60 RθJC（Steady State） 3.2 Techcode Semiconductor Limited 1 ℃/W ℃/W www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3482C ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 40 - - V Zero Gate Voltage Drain Current IDSS VDS=32V, VGS=0V - - 1 Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 μA nA Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1.35 - 3 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=12A - 6.9 8.5 mΩ VGS=4.5V, ID=10A - 10.5 15 mΩ OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) DYNAMIC CHARACTERISTICS (Note5) Gate Resistance RG VDS=0V, VGS=0V, F=1.0MHz - 1.7 - Ω Input Capacitance Ciss VDS=15V, VGS=0V, F=1.0MHz - 690 - PF Output Capacitance Coss - 193 - PF Reverse Transfer Capacitance Crss - 38 - PF - 14.3 - nS SWITCHING CHARACTERISTICS (Note5) Turn-on Delay Time td(on) VDD=15V, VGS=10V, RG=3.3Ω ID=1A Turn-on Rise Time tr - 5.6 - nS Turn-Off Delay Time td(off) - 20 - nS Turn-Off Fall Time tf - 11 - nS Total Gate Charge Qg - 5.8 - nC Gate-Source Charge Qgs - 3 - nC Gate-Drain Charge Qgd - 1.2 - nC VDS=20V, ID=12A, VGS=4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Source Current (Note 1,4) IS VG=VD=0V, Force Current - - 30 A Diode Forward Voltage (Note 2) VSD VGS=0V, IS=20A - 0.8 1.1 V NOTES: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Pulse width limited by max. junction temperature. 3. The power dissipation is limited by 150℃ junction temperature. 4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. 5. Guaranteed by design, not subject to production testing. March 29, 2021 Techcode Semiconductor Limited 2 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3482C Typical Operating Characteristics March 29, 2021 Techcode Semiconductor Limited 3 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3482C Typical Operating Characteristics (Cont.) March 29, 2021 Techcode Semiconductor Limited 4 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3482C Package Information PPAK-3*3-8 Package Symbol A A1 b c D D1 D2 E E1 E2 E3 E4 E5 e K L L1 t March 29, 2021 Min 0.70 / 0.20 0.10 3.15 3.00 2.25 3.15 2.90 1.54 0.28 0.37 0.10 0.60 0.49 0.30 0.06 / PPAK-3*3-8(mm) Nom 0.75 / 0.30 0.152 3.3 3.15 2.45 3.30 3.05 1.74 0.48 0.57 0.20 0.65 0.69 0.40 0.125 / Techcode Semiconductor Limited 5 Max 0.85 0.05 0.40 0.25 3.45 3.30 2.65 3.45 3.20 1.94 0.68 0.77 0.30 0.70 0.89 0.50 0.20 0.13 www.techcodesemi.com Techcode® DATASHEET N-Channel Enhancement Mode MOSFET TDM3482C Design Notes March 29, 2021 Techcode Semiconductor Limited 6 www.techcodesemi.com