JSM200N06C

JSM200N06C 60V N-Channel MOSFET TO-220 60V N-Channel MOSFET Features: Low Intrinsic Capacitances. MI JS Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 130nC (Typ.). 1.Gate BVDSS=60V,ID=200A 2.Drain (D) RDS(on) : 3.4mΩ (Max) @VG=10V 3.Source (S) O CR □ □ □ □ □ □ □ (G) 100% Avalanche Tested mi Se Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol ID3 PD Unit 60 ±20 180 116 720 28 870 1.96 245 -55~150 V V TC=25°C TC=100°C TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy Maximum Power Dissipation TC=25°C TC=100°C Junction & Storage Temperature Range r to TJ, TSTG Maximum uc IDP4 IAS5 EAS5 Drain-to-Source Voltage Gate-to-Source Voltage nd co VDSS VGSS A mJ W °C Thermal Characteristics Symbol Rθjc Rθja Parameter Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient www.jsmsemi.com Typical Unit 0.51 62.5 ℃/W 第１／６页 JSM200N06C 60V N-Channel MOSFET Symbol Static Characteristics (TA=25°C unless otherwise noted) Parameter Test Conditions Min. BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(on)1 Drain-Source On-Resistance VSD1 I S3 trr Qrr MI JS RG Gate Resistance Max. Unit VGS=0V,ID=250uA VDS=60V,VGS=0V TJ=100°C VDS=VGS,ID=250uA 60 — — 2 — — — — — 1 100 4 VGS=±25V, VDS=0V VGS=10V, ID=70A — — — — 2.6 — ±100 3.4 — ISD70A,V — — — — — — 48 69.6 140 — — V A nS nC — 9.0 — Ω — — — — — — — 4882 635 342 37.9 22.7 68.8 23.5 — — — — — — — — — — 86.2 23.6 29.4 — Diode Characteristics Diode Forward Voltage Diode Continuous Forward Current Reverse Recovery Time Reverse Recovery Charge Typ GS=0V IF=70A,VDD=50V dI/dt=100A/us 1.3 V uA V nA mΩ O CR Dynamic Characteristics2 VGS=0V, VDS=25V Frequency=1MHz mi Se Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Gate Charge Characteristics2 Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge VGS=0V, VDS=0V, Frequency=1MHz VDD=30V,ID=90A, VGS=10V,RG=6Ω nd co VDS=48V,VGS=10V ID=90A — — pF nS nC r to uc Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Package limitation current is 58 A.Calculated continuous current based on maximum allowable junction temperature. 4: Repetitive rating, pulse width limited by max junction temperature. 5: Starting TJ = 25°C,L = 0.5mH www.jsmsemi.com 第２／６页 JSM200N06C 60V N-Channel MOSFET Typical Characteristics O CR MI JS Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature uc nd co mi Se Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics r to Figure 5 Drain-to-Source On Resistance vs Drain Current www.jsmsemi.com Figure 6 Typical Transfer Characteristics 第３／６页 JSM200N06C 60V N-Channel MOSFET Typical Characteristics (Continued) O CR MI JS . . Figure 8 Typical Body Diode Transfer Characteristics Figure 7 Typical Gate Charge vs Gate to Source Voltage r to uc nd co mi Se Figure 9 Typical Capacitance vs Drain to Source Voltage Figure 10 Typical Drian to Source on Resistance vs Junction Temperature www.jsmsemi.com 第４／６页 JSM200N06C 60V N-Channel MOSFET Typical Characteristics (Continued) O CR MI JS Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature r to uc nd co mi Se Figure 13 Maximum Effective Transient Thermal Impedance, Junction-to-Case www.jsmsemi.com 第５／６页 JSM200N06C 60V N-Channel MOSFET Package Dimension TO-220 O CR MI JS r to uc nd co mi Se www.jsmsemi.com 第６／６页