JSM4N65D

JSM4N65D 650V N-Channnel MOSFET ｄｕ ｃｔ ｏｒ ●Features： ■ 4.0A, 650V, RDS(on)(Typ) =2.2Ω@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Switching ■ Improved dv/dt Capability ●Application: ■ High Frequency Switching Mode Power Supply ■ Active Power Factor Correction IDM ｉｃ ID Drain-Source Voltage Drain Current - Continuous(Tc=25C) - Continuous(Tc=100C) Drain Current ｅｍ VDSS ｏｎ Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter -Pulsed (Note1) Value Unit 650 V 4.0* A 2.5* A 16* A ±30 V Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 240 mJ IAR Avalanche Current (Note1) 4.0 A EAR Repetitive Avalanche Energy (Note1) 10.0 mJ Peak Diode Recovery dv/dt (Note3) 4.5 V/ns ＣＲ Ｏ dv/dt 　Ｓ VGSS Power Dissipation(TC =25C) -Derate above 25°C 51 W 0.39 W/C Tj Operating Junction Temperature 150 C -55 to+150 C Max Unit ＪＳ ＭＩ PD Tstg Storage Temperature Range * Drain Current Limited by Maximum Junction Temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case 2.5 C /W RθJA Thermal Resistance,Junction to Ambient 83 C /W ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／５页 JSM4N65D 650V N-Channnel MOSFET IDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance Forward Transconductance Unit 650 -- -- V -- 0.65 -- V/C ----- ----- 1 10 100 -100 μA μA nA nA 2.0 -- -2.2 4.0 2.6 V Ω -- 3.6 -- S ---- 510 70 10 ---- pF pF pF -------- 16 49 45 36 13 3.8 4.9 -------- ns ns ns ns nC nC nC ------ ---330 2.67 4.0 16 1.4 --- A A V ns μC ID=250μA (Referenced to 25C) VDS=650V,VGS=0V VDS=520V,Tc=125C VGS=+30V, VDS=0V VGS=-30V, VDS=0V VDS= VGS, ID=250μA VGS=10 V, ID=2.0A VDS=40 V, ID=2.0A ｏｎ gFS Max ｏｒ Breakdown Voltage Temperature Coefficient Typ ｄｕ △BVDSS /△TJ Min ｃｔ Electrical Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Test Conditons Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA (Note4) ＪＳ ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 325 V, ID = 4.0 A, RG = 25 Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg VDS = 520 V, ID =4.0 A, Gate-Source Charge Qgs VGS = 10 V (Note4,5) Gate-Drain Charge Qgd Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VGS =0V,IS=4.0A VSD Reverse Recovery Time trr VGS =0V, IS=4.0A, d IF /dt=100A/μs (Note4) Reverse Recovery Charge Qrr Notes: 1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature. 2、L = 25.0mH, IAS =4.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C. 3、ISD≤4.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C. 4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%. 5、Essentially Independent of Operating Temperature. ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／５页 JSM4N65D 650V N-Channnel MOSFET Transfer Characteristics ｄｕ ｃｔ ｏｒ On-Regin Characteristics Body Diode Forward Voltage Variation vs. Source Current and Temperature ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ ｏｎ On-Resistance Variation vs. Drain Current and Gate Voltage ＪＳ ＭＩ Capacitance Characteristics Gate Charge Characteristics ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／５页 JSM4N65D 650V N-Channnel MOSFET On-Resistance Variation vs. Temperature ｏｎ ｄｕ ｃｔ ｏｒ Breakdown Voltage Variation vs. Temperature Maximum Drain Current Vs. Case Temperature ＪＳ ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ Maximum Safe Operating Area ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第４／５页 JSM4N65D 650V N-Channnel MOSFET TO-252 Package Dimensions max 6.60 5.40 4.60 4.60 0.15 4.95 6.20 1.77 0.96 SYMBOL D D1 D2 e E F G L θ（度） min 2.90 0.45 0.45 2.20 0.45 1.40 0 nom 2.30 2.40 0.55 ｏｒ nom 1.70 ｃｔ min 6.40 5.20 4.40 4.40 0 4.65 5.90 1.57 0.90 1.60 10.00 ＪＳ ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ ｏｎ ｄｕ SYMBOL A A1 A2 A3 A4 A5 B B1 C UNIT：mm max 3.10 0.55 0.55 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第５／５页