KIA50N06BD

KIA 50A，60V N-CHANNEL MOSFET 50N06B SEMICONDUCTORS 1. Features n RDS(on)=10.5mΩ@ VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current 2. Applications n Power supply n UPS n Battery management system 3.Symbol 1 of 6 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.1 JAN 2014 KIA 50A，60V N-CHANNEL MOSFET 50N06B SEMICONDUCTORS 4. Absolute maximum ratings Parameter Symbol (TA=25°C,unless otherwise noted) Rating Units Drain-source voltage VDSS 60 V Gate-source voltage VGSS +25 V 50 A 35 A IDP4 250 A Avalanche current IAS5 15 A Avalanche energy, EAS5 120 mJ 88 W 44 W -55-175 ℃ Continuous drain current Pulse drain current TC=25ºC TC=100ºC TC=25ºC Maximum power dissipation TC=25 ºC TC=100ºC Junction & storage temperature range ID3 PD TJ,TSTG 5. Thermal characteristics Parameter Symbol Thermal resistance,Junction-ambient RθJA Thermal resistance,Junction-case RθJC 2 of 6 Rating To-252 To-220 100 62.5 1.1 1.7 Unit ºC/W ºC/W Rev 1.1 JAN 2014 KIA 50A，60V N-CHANNEL MOSFET 50N06B SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-resistance Gate resistance Diode forward voltage (TA=25°C,unless otherwise noted) Min Typ Max Units Symbol Test Conditions BVDSS VGS=0V,IDS=250μA 60 - - VDS=48V, VGS=0V - - 1 TJ=125°C - - 20 VGS(th) VDS=VGS, ID=250μA 2.0 3.0 4.0 V IGSS VGS=+25V, VDS=0V - - +100 nA RDS(on)1 VGS=10V,ID=30A - 10.5 12.5 mΩ Rg VDS=0V, VGS=0V,f=1MHz - 1.0 - Ω VSD1 ISD=30A, VGS=0V - 0.8 1.3 V - - 50 A IDSS V μA Diode continuous forward current IS3 Reverse recovery time trr IF=30A , - 32 - nS Reverse recovery charge Qrr dlSD/dt=100A/μs - 60 - nC Input capacitance Ciss - 2060 - Output capacitance Coss - 755 - Reverse transfer capacitance Crss - 375 - Turn-on delay time td(on) - 14 - Rise time Turn-off delay time Fall time VDS=25V,VGS=0V, f=1MHz tr VDD=30V, ID=30A, - 13 td(off) RG=5Ω,VGS=10V - 20 - - 7.5 - - 50 - - 12 -- - 17 -- tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=48V, VGS=10V IDS=30A - Note:1: Pulse test; pulse width