KIA50N06CD

KIA 50A 60V N-CHANNEL MOSFET KIA50N06C SEMICONDUCTORS 1. General Description KIA50N06C is an N-channel enhancement mode power Mosfet field effect transistor which is produced using KIA’s LVMosfet technology.the improved process and cell structure have been especially tailored to minimize on-state resistance,provide superior switching performance. This device is widely used in UPS,Power Management for Inverter Systems. 2. Features n n n n n 50A, 60V, RDS(on) typ. = 11mΩ(typ.)@VGS = 10 V Low gate charge Low Crss Fast switching Improved dv/dt capability 3. Pin configuration 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.1 Sep 2019 KIA 50A 60V N-CHANNEL MOSFET KIA50N06C SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KIA50N06CD TO-252 KIA KIA50N06CP TO-220 KIA 5. Absolute maximum ratings (TC= 25ºC , unless otherwise noted) Symbol Ratings Parameter TO-252 VDSS Drain-Source Voltage ID Drain Current -Continuous (TC = 25 ºC) -Continuous (TC = 100 ºC) IDM VGSS EAS Drain Current -Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy 60 50 30 200 ±20 405 (Note 1) Power Dissipation (TC = 25 ºC) -Derate above 25 ºC Operating and Storage Temperature Range PD TJ,TSTG TO-220 90 0.72 110 0.88 Units V A A A V mJ W W/ºC ºC -55 to +150 6. Thermal Characteristics Symbol Parameter RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 of 5 TO-252 1.39 62.5 Ratings TO-220 1.14 62.5 Units ºC /W ºC /W Rev 1.1 Sep 2019 KIA 50A 60V N-CHANNEL MOSFET KIA50N06C SEMICONDUCTORS 7. Electrical characteristics Symbol (TC= 25ºC , unless otherwise noted) Test Conditions Min Typ Max Parameter Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA 60 -- -- V IDSS Drain-Source Leakage Current VDS = 60 V, VGS = 0 V -- -- 1 uA IGSS Gate- Source Leakage Current VGS = ±20 V, VDS = 0 V -- -- ±100 nA 1.1 1.6 2.5 V 13 mΩ On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 20 A -- 11 RG Gate Resistance f = 1.0 MHz -- 3.5 -- 2450 -- pF -- 170 -- pF -- 130 -- pF -- 15 -- ns -- 72 -- ns -- 180 -- ns -- 79 -- ns -- 52 -- nC -- 11 -- nC -- 12 -- nC -- -- 50 A Ω -- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V,VGS=10V, ID = 30 A, RG = 25 Ω (Note2.3) VDD = 48 V, ID = 60A, VGS = 10 V (Note 2,3) Drain-Source Diode Characteristics and Maximum Ratings Integral Reverse P-N IS Continuous Source Current Junction Diode in the ISM Pulsed Source Current MOSFET VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A -- -- 200 A -- -- 1.4 V trr Reverse Recovery Time -- 20 -- ns Qrr Reverse Recovery Charge -- 0.02 -- uC VGS = 0 V, IS = 30 A, dIF / dt = 100 A/us (Note 4) Notes: 1. L = 10mH, VDD = 50V, RG = 10Ω, Starting TJ = 25°C 2. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 3. Essentially independent of operating temperature 3 of 5 Rev 1.1 Sep 2019 KIA 50A 60V N-CHANNEL MOSFET KIA50N06C SEMICONDUCTORS 8. Typical Characteristics 4 of 5 Rev 1.1 Sep 2019 KIA 50A 60V N-CHANNEL MOSFET KIA50N06C SEMICONDUCTORS 5 of 5 Rev 1.1 Sep 2019