0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBT5551T

MMBT5551T

  • 厂商:

    CBI(创基)

  • 封装:

    SOT-523-3

  • 描述:

    SOT523,NPN,VCEO=160V,600mA

  • 数据手册
  • 价格&库存
MMBT5551T 数据手册
MMBT5551T TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Test conditions MIN TYP MAX UNIT V(BR)CBO IC=100μA, IE=0 180 V V(BR)CEO* IC= 1mA, IB=0 160 V V(BR)EBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA hFE1* VCE=5V, IC=1mA 80 hFE2* VCE=5V, IC =10mA 100 hFE3* VCE=5V, IC=50mA 50 DC current gain Collector-emitter saturation voltage VCEsat* Base-emitter saturation voltage VBEsat* IC=10mA, IB=1mA 0.15 IC=50mA, IB=5mA 0.2 IC=10mA, IB= 1mA 1 IC=50mA, IB= 5mA 1 Transition frequency fT VCE=10V, IC=10mA, f=100MHz Collector output capacitance Cob Input capacitance Cib Noise figure NF Page 1 of 3 300 100 V V 300 MHz VCB=10V, IE=0, f=1MHz 6 pF VBE=0.5V, IC=0, f=1MHz 20 pF 8 dB VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1kΩ 5/31/2011 Typical Characteristics Page 2 of 3 MMBT5551 5/31/2011 Page 3 of 3 5/31/2011
MMBT5551T 价格&库存

很抱歉,暂时无法提供与“MMBT5551T”相匹配的价格&库存,您可以联系我们找货

免费人工找货
MMBT5551T
    •  国内价格
    • 20+0.06665
    • 200+0.06235
    • 500+0.05805
    • 1000+0.05375
    • 3000+0.05160
    • 6000+0.04859

    库存:2905