2SK3018

Plastic-Encapsulate MOSFETS N-channel MOSFET SOT-23 FEATURES   Low on-resistance Fast switching speed  Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits  Easy to parallel  1. GATE 2. SOURCE 3. DRAIN Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Value Units Symbol Parameter VDS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.35 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature RθJA Thermal Resistance, Junction-to-Ambient -55~+150 357 V ℃ ℃ /W MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V Gate –Source leakage current IGSS VGS =±20V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA Drain-Source On-Resistance RDS(on) Forward Transconductance gFS 30 V 0.2 ±2 uA 1.5 V VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω VDS =3V, ID = 10mA 0.8 µA mS 20 Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω, 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf * These parameters have no way to verify. 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Typical Characteristics Output Characteristics 4.0V Ta=25℃ 0.20 V =3.0V GS 3.5V Pulsed 100 0.15 (mA) 30 D VGS =2.5V 0.10 0.05 DRAIN CURRENT I DRAIN CURRENT I D (A) Transfer Characteristics 200 VGS =2.0V 10 3 1 VDS =3V 0.3 Ta=25℃ VGS =1.5V 0.00 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE V DS Pulsed 0.1 5 0 (V) 1 3 V GS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 60 15 Ta=25℃ Pulsed Pulsed (Ω ) (Ω ) Ta=25℃ 10 DS(ON) 40 ON-RESISTANCE ON-RESISTANCE R R DS(ON) 2 GATE TO SOURCE VOLTAGE 20 VGS =2.5V 0 3 10 30 DRAIN CURRENT I 200 ID=50mA VGS =4V 1 S —— ID ID=100mA 5 100 0 200 (mA) 0 5 10 GATE TO SOURCE VOLTAGE 15 V GS VSD VGS =0V 100 T =25℃ a Pulsed SOURCE CURRENT I S (mA) 30 10 3 1 0.3 0.1 0.2 0.4 0.6 0.8 SOURCE TO DRAIN VOLTAGE VSD (V) 1.0 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. (V) 20 SOT-23 Package Outline Dimensions 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.