2SK3018

2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits z Easy to parallel z 3 1 2 1. GATE 2. SOURCE 3. DRAIN Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Value Units Drain-Source voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance from Junction to Ambient Symbol Parameter VDS 625 ℃ /W MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 10µA Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 µA Gate –Source leakage current IGSS VGS =±20V, VDS = 0V ±500 nA Gate Threshold Voltage VGS(th) VDS = 3V, ID =100µA 1.5 V Drain-Source On-Resistance RDS(on) VGS = 4V, ID =10mA 8 Ω VGS =2.5V,ID =1mA 13 Ω Forward Transconductance gFS VDS =3V, ID = 10mA 30 V 0.8 mS 20 Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss 9 pF Reverse Transfer Capacitance Crss 4 pF td(on) 15 ns VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10Ω, RL=500Ω 80 ns 80 ns VDS =5V,VGS =0V,f =1MHz Switching Characteristics* Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf *These parameters have no way to verify. 1/2 2SK3018 Typical Characteristics Transfer Characteristics Output Characteristics 0.20 200 Ta=25℃ VGS=3.0V 4.0V 100 Pulsed 3.5V 0.15 ID VGS=2.5V 0.10 DRAIN CURRENT DRAIN CURRENT ID (A) (mA) 30 0.05 10 3 1 VGS=2.0V VDS=3V 0.3 Ta=25℃ VGS=1.5V Pulsed 0.1 0.00 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS 0 5 4 (V) Pulsed ( Ω) Ta=25℃ Pulsed ( Ω) Ta=25℃ ON-RESISTANCE RDS(ON) 10 RDS(ON) ON-RESISTANCE 3 VGS 15 40 20 ID=100mA 5 ID=50mA VGS= 2.5V VGS= 4V 0 1 10 3 0 100 30 DRAIN CURRENT ID 200 0 (mA) IS —— VSD VGS=0V 100 Ta=25℃ Pulsed 30 10 3 1 0.3 0.1 0.2 0.4 0.6 SOURCE TO DRAIN VOLTAGE 5 10 GATE TO SOURCE VOLTAGE 200 IS (mA) 2 RDS(ON) —— VGS —— ID 60 SOURCE CURRENT 1 GATE TO SOURCE VOLTAGE (V) 0.8 1.0 VSD (V) 2/2 15 VGS (V) 20