WST2333A
P-Ch MOSFET
General Description
Product Summery
The WST2333A is the highest performance
trench P-Ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the small power
switching and load switch applications.
BVDSS
RDSON
ID
-12V
23mΩ
-6A
Applications
The WST2333A meet the RoHS and Green
Product requirement with full function
reliability approved.
z High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
SOT-23-3L Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-12
V
VGS
Gate-Source Voltage
±8
V
-6
A
ID@Tc=25℃
1
Continuous Drain Current, VGS @ -4.5V
1
ID@Tc=70℃
Continuous Drain Current, VGS @ -4.5V
-3.9
A
IDM
Pulsed Drain Current2
-18.8
A
3
PD@TA=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
Thermal Resistance Junction-Case1
www.winsok.tw
Page 1
1
Typ.
Max.
Unit
---
125
℃/W
---
80
℃/W
Rev:1.2 Apr.2021
WST2333A
P-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
2
Static Drain-Source On-Resistance
Min.
Gate Threshold Voltage
Max.
Unit
VGS=0V , ID=-250uA
-12
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.01
---
V/℃
VGS=-4.5V , ID=-4A
---
23
32
VGS=-2.5V , ID=-2A
---
32
40
42
52
-0.3
-0.5
-1.0
V
---
2.96
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
VGS=-1.8V , ID=-1.5A
VGS(th)
Typ.
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-4A
---
21
---
S
Qg
Total Gate Charge (-4.5V)
---
27.3
---
Qgs
Gate-Source Charge
---
3.6
---
Qgd
Gate-Drain Charge
---
6.5
---
Turn-On Delay Time
---
9.2
---
Td(on)
VDS=-15V , VGS=-4.5V , ID=-4A
uA
nC
Rise Time
VDD=-10V , VGS=-4.5V , RG=3.3Ω
---
59
---
Turn-Off Delay Time
ID=-4A
---
99
---
Fall Time
---
71
---
Ciss
Input Capacitance
---
1025
---
Coss
Output Capacitance
---
220
---
Crss
Reverse Transfer Capacitance
---
187
---
Min.
Typ.
Max.
Unit
---
---
-4.7
A
---
---
-18.8
A
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
---
52
---
nS
IF=-4A , dI/dt=100A/µs , TJ=25℃
---
28
---
nC
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,4
Continuous Source Current
2,4
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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