TP65H035WSQA

TP65H035WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source tab) Description Features The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge. Related Literature  AN0009: Recommended External Circuitry for GaN FETs  AN0003: Printed Circuit Board Layout and Probing  AN0010: Paralleling GaN FETs Ordering Information Part Number Package Package Configuration TP65H035WSQA 3 lead TO-247 Source     JEDEC-qualified GaN technology Junction temperature rating of 175C Dynamic RDS(on) production tested Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Transient over-voltage capability  Very low QRR  Reduced crossover loss  RoHS compliant and Halogen-free packaging Benefits  Enables AC-DC bridgeless totem-pole PFC designs — Increased power density — Reduced system size and weight — Overall lower system cost  Achieves increased efficiency in both hard- and softswitched circuits  Easy to drive with commonly-used gate drivers  GSD pin layout improves high speed design Applications TP65H035WSQA TO-247 (top view) S     Automotive Datacom Broad industrial PV inverter Key Specifications G VDS (V) min 650 V(TR)DSS (V) max 800 RDS(on) (mΩ) max* S D 41 QRR (nC) typ 178 QG (nC) typ 24 * Dynamic RDS(on); see Figures 13 and 14 Common Topology Power Recommendations Cascode Schematic Symbol Cascode Device Structure CCM bridgeless totem-pole* 3980W max Hard-switched inverter** 4690W max Conditions: FSW=45kHz; TJ=115°C; THEATSINK=90°C; insulator between device and heatsink (6 mil Sil-Pad® K-10); power de-rates at lower voltages with constant current * VIN=230VAC; VOUT=390VDC ** VIN=380VDC; VOUT=240VAC February 1, 2018 © 2018 Transphorm Inc. Subject to change without notice. tp65h035wsqa.0 1 TP65H035WSQA Absolute Maximum Ratings (Tc=25°C unless otherwise stated.) Symbol VDSS Parameter Limit Value Unit Drain to source voltage (TJ = -55°C to 150°C) 650 Transient drain to source voltage a 800 Gate to source voltage ±20 Maximum power dissipation @TC=25°C 187 W Continuous drain current @TC=25°C b 47.2 A Continuous drain current @TC=100°C b 33.4 A Pulsed drain current (pulse width: 10µs) 240 A (di/dt)RDMC Reverse diode di/dt, repetitive c 1800 A/µs (di/dt)RDMT Reverse diode di/dt, transient d 3800 A/µs Case -55 to +175 °C Junction -55 to +175 °C -55 to +175 °C Soldering peak temperature e 260 °C Mounting Torque 80 N cm Maximum Unit V(TR)DSS VGSS PD ID IDM TC TJ TS TSOLD - Operating temperature Storage temperature V Notes: a. In off-state, spike duty cycle D