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ESDLLC5V0D8BH

ESDLLC5V0D8BH

  • 厂商:

    YINT(音特电子)

  • 封装:

    0402

  • 描述:

    ESDLLC5V0D8BH

  • 数据手册
  • 价格&库存
ESDLLC5V0D8BH 数据手册
TVS DIODE ESDLLC5V0D8BH Trustworthy electronic circuit protection expert ESDLLC5V0D8BH Features package. The small size, ultra-low capacitance and high ESD ●Ultra small package: 1.0x0.6x0.5mm surge protection make ESDLLC5V0D8BH an ideal choice to ●Ultra low capacitance: 0.25pF typical protect cell phone, digital video interfaces and other high speed ●Ultra low leakage: nA level ports. ●Low operating voltage: 5V Applications ●Low clamping voltage ●Smart phones ●2-pin leadless package ●Display Ports ●Complies with following standards: ●MDDI Ports – IEC 61000-4-2 (ESD) immunity test ●USB Ports Air discharge: ±20kV ●Digital Video Interface (DVI) Contact discharge: ±15kV ●PCI Express and Serial SATA Ports Circuit Diagram – IEC61000-4-5 (Lightning) 4.5A (8/20μs) ●RoHS Compliant ●Lead Finish: NiPdAu Description The ESDLLC5V0D8BH is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The ESDLLC5V0D8BH has an ultra-low capacitance with a typical value at 0.25pF, and complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. It is assembled into an ultra-small 1.0x0.6x0.5mm lead-free DFN Absolute Maximum Ratings Tamb=25°C unless otherwise specified Parameter Peak Pulse Power (8/20µs) Maximum Reverse Peak Pulse Current Symbol Value Unit Ppp 110 W *1 4.5 A IPP ESD per IEC 61000−4−2 (Air) ±20 VESD ESD per IEC 61000−4−2 (Contact) Storage Temperature Range Operating Temperature Range KV ±15 TSTJ -55 to +150 ℃ TJ -55 to +125 ℃ Electrical Characteristics TA=25°C unless otherwise specified Symbol Parameter Conditions VRWM Reverse Working Peak Voltage - VBR Reverse Breakdown Voltage IT = 1mA IR Reverse Current VC Max Units 5.0 V 8.5 V VRWM = 5V 0.5 μA Clamping Voltage IPP=1A, tP =8/20μs 12 V VC Clamping Voltage IPP=4.5A, tP =8/20μs 18 20 V CD Diode Capacitance VR = 0V, f = 1MHz 0.22 0.30 pF www.yint.com.cn 1 Min 6.0 Typ 7.5 Rev:19.3 TVS DIODE ESDLLC5V0D8BH Trustworthy electronic circuit protection expert Characteristic Curves Junction Capacitance vs. Reverse Voltage Clamping Voltage vs. Peak Pulse Current Peak Pulse Power vs. Pulse Time IEC61000−4−2 Pulse Waveform Power Derating Curve 8/20μ s Pulse Waveform www.yint.com.cn 2 Rev:19.3 TVS DIODE ESDLLC5V0D8BH Trustworthy electronic circuit protection expert DFN1006-2 Package Outline & Dimensions DIMENSIONS SYM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX A 0.45 0.50 0.55 0.018 0.020 0.022 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.95 1.00 1.05 0.037 0.039 0.041 e 0.65 BSC 0.026 BSC E 0.55 0.60 0.65 0.022 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 L1 h 0.05REF 0.07 0.12 0.002REF 0.17 0.003 0.005 0.007 Suggested Land Pattern SYM www.yint.com.cn 3 DIMENSIONS MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 Rev:19.3
ESDLLC5V0D8BH 价格&库存

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