PJM04P30SQ

PJM04P30SQ P-Channel Enhancement Mode Power MOSFET SOT-89 Features ⚫ High density cell design for ultra low RDS(on) ⚫ Excellent package for good heat dissipation ⚫ VDS= -30V,ID= -4.1A RDS(on)< 65mΩ @VGS= -10V 1. Gate 2.Drain 3.Source Marking Code: 04P30 Applications Schematic Diagram ⚫ Power Switching Application 2.Drain 1.Gate 3.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous -ID 4.1 A Drain Current-Pulsed Note1 -IDM 20 A Maximum Power Dissipation PD 1.3 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJC 96 °C/W Storage Temperature Range Thermal Characteristics Maximum Junction-to-Case Note2 www.pingjingsemi.com Revision：1.0 Feb-2022 1/8 PJM04P30SQ P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 30 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-30V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 0.7 0.9 1.3 V Drain-Source On-Resistance Note3 RDS(on) VGS=-10V,ID=-4.1A -- 48 65 mΩ VGS=-4.5V,ID=-3A -- 56 85 mΩ VDS=-5V,ID=-4.1A -- 10 -- S -- 880 -- pF -- 105 -- pF Static Characteristics Forward Transconductance Note3 gFS Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 65 -- pF Turn-on Delay Time td(on) -- 7 -- nS Turn-on Rise Time tr VDD=- 15V,ID=-4.1A, -- 3 -- nS Turn-off Delay Time td(off) VGS=-10V,RG=6Ω -- 30 -- nS -- 12 -- nS -- 8.5 -- nC -- 1.8 -- nC -- 2.7 -- nC -- -- 1.2 V -- -- 4.1 A VDS=-15V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V, ID= -4.1A,VGS=-4.5V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS VGS=0V,IS=-4.1A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：1.0 Feb-2022 2/8 PJM04P30SQ P-Channel Enhancement Mode Power MOSFET -ID Drain Current (A) RDS(on) On-Resistance (mΩ) Typical Characteristic Curves -ID Drain Current (A) -ID Drain Current (A) RDS(on) On-Resistance (Normalized) -VDS Drain-Source Voltage (V) -VGS Gate-Source Voltage (V) 1.8 VGS=4.5V 1.6 VGS=10V 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 TJ Junction Temperature (℃) C Capacitance (pF) RDS(on) On-Resistance (mΩ) ID=4.1A Ciss Crss Coss -VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：1.0 Feb-2022 -VDS Drain-Source Voltage (V) 3/8 VDS=-15V ID=4.1A Qg Gate Charge (nC) www.pingjingsemi.com Revision：1.0 Feb-2022 -IS Reverse Drain Current (A) -VGS Gate-Source Voltage (V) PJM04P30SQ P-Channel Enhancement Mode Power MOSFET -VSD Source-Drain Voltage (V) 4/8 PJM04P30SQ P-Channel Enhancement Mode Power MOSFET Package Outline SOT-89 Dimensions in mm Ordering Information Device Package PJM04P30SQ SOT-89 www.pingjingsemi.com Revision：1.0 Feb-2022 Shipping 1,000PCS/Reel&7inches 3,000PCS/Reel&13inches 5/8 PJM04P30SQ P-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Feb-2022 6/8 PJM04P30SQ P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging (1,000PCS/Reel&7inches) Cover Tape 1,000 pcs per reel SOT-89 Carrier Tape 8,000 pcs per box 8 reels per box 32,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T1 E B G F Reel (7'') www.pingjingsemi.com Revision：1.0 Feb-2022 symbol Value(unit:mm) A Φ179±1 B 60.5±0.2 C 15.3±0.3 D 12.5~13.7 E Φ13.5±0.2 F Φ10.0±0.2 G 2.7±0.2 T1 1.0±0.2 C 7/8 PJM04P30SQ P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging (3,000PCS/Reel&13inches) 3,000 pcs per reel SOT-89 9,000 pcs per box 3 reels per box 36,000 pcs per carton 4 boxes per carton  Embossed tape and reel data B A T E D F Reel (13'') www.pingjingsemi.com Revision：1.0 Feb-2022 symbol Value(unit:mm) A Φ330±1 B 12.7±0.5 C 16.5±0.3 D Φ99.5±0.5 E Φ13.6±0.3 F 2.8±0.3 T1 1.9±0.2 C 8/8