PJM04P30SG

PJM04P30SG P-Channel Enhancement Mode Power MOSFET SOT-23-6 Features ⚫ High power and current handing capability 4.S ⚫ VDS= -30V,ID= -4.1A 5.D RDS(on)< 60mΩ @VGS= -10V 3.G 6.D 2.D 1.D Marking Code:3407 Pin Assignment Applications ⚫ PWM applications ⚫ Load switch ⚫ Power management Schematic Diagram D D D D G S 1、2、5、6:Drain 3:Gate Top View 4:Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous -ID 4.1 A Drain Current-Pulsed Note1 -IDM 20 A Maximum Power Dissipation PD 1.2 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 104 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：1.0 Jul-2021 1/7 PJM04P30SG P-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage -V(BR)DSS VGS=0V,ID=-250μA 30 -- -- V Zero Gate Voltage Drain Current -IDSS VDS=-24V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 -VGS(th) VDS=VGS,ID=-250μA 1 1.4 3 V Drain-source on-resistance Note2 RDS(on) VGS=-10V, ID=-4.1A -- 50 60 mΩ VGS=-4.5V, ID=-3A -- 68 87 mΩ Forward Transconductance Note3 gFS VDS=-5V,ID=-4A 5.5 -- -- S -- 650 -- pF -- 105 -- pF Static Characteristics Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 65 -- pF Turn-on Delay Time td(on) -- 8.5 -- nS Turn-on Rise Time tr VDD=-15V,RL=3.6Ω -- 4.5 -- nS Turn-off Delay Time td(off) VGS=-10V,RCEN=3Ω -- 26 -- nS VDS=-15V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 12.5 -- nS Total Gate Charge Qg -- 12.5 -- nC Gate-Source Charge Qgs -- 2.8 -- nC Gate-Drain Charge Qgd -- 2.7 -- nC -- -- 1.2 V -- -- 4.1 A VDS=-15V ID= -4.1A,VGS=-10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 -VSD Diode Forward Current Note2 -IS VGS=0V,IS=-4.1A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：1.0 Jul-2021 2/7 PJM04P30SG P-Channel Enhancement Mode Power MOSFET -ID Drain Current (A) RDS(on) On-Resistance(mΩ) Typical Characteristic Curves -ID Drain Current (A) -ID Drain Current (A) Normalized On-Resistance -VDS Drain-Source Voltage (V) -4.1A -VGS Gate-Source Voltage (V) TJ Junction Temperature(℃) C Capacitance (pF) RDS(on) On-Resistance(mΩ) -4.1A -VGS Gate-Source Voltage (V) www.pingjingsemi.com Revision：1.0 Jul-2021 Ciss Coss Crss -VDS Drain-Source Voltage (V) 3/7 -IS Reverse Drain Current (A) -VGS Gate-Source Voltage (V) PJM04P30SG P-Channel Enhancement Mode Power MOSFET ID= -4.1A -VDS Drain-Source Voltage (V) -ID Drain Current (A) Qg Gate Charge (nC) r(t),Normalized Effective Transient Thermal Impedance -VDS Drain-Source Voltage (V) Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：1.0 Jul-2021 4/7 PJM04P30SG P-Channel Enhancement Mode Power MOSFET Package Outline SOT-23-6 Dimensions in mm 2.92 ±0.1 0.127 +0.05/-0.02 10 1.6 2.8 ±0.1 ±0.1 1.9±0.1 12 R0.15MAX 0.95±0.1 0.35±0.05 R0.15MAX 0.06 12 ± 0.05 0.65 ±0.1 1.1 ±0.1 10 Ordering Information Device Package Shipping PJM04P30SG SOT-23-6 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：1.0 Jul-2021 5/7 PJM04P30SG P-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：1.0 Jul-2021 6/7 PJM04P30SG P-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23-6 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 B C E Symbol A B C E F D T1 T2 Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F 1.55±0.05 3.50±0.05 2.00±0.05 1.10±0.10 4.00±0.10 8±0.10 4.00±0.10 1.75±0.10 Reel (7'') Pin1 Tape (8mm) www.pingjingsemi.com Revision：1.0 Jul-2021 7/7