MMBT3904DC

MMBT3904DC NPN Transistor DFN1x0.6-3L Features  For Switching and AF Amplifer Applications. 3.C Equivalent Circuit 2.E 3.Collector 1.B 1.Base 2.Emitter 3.Collector Marking Code : 1.Base 1E 2.. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 200 mA Maximum Power Dissipation PD 250 mW Junction Temperature TJ 150 ℃ TSTG -55 to +150 ℃ Storage Temperature Range www.pingjingsemi.com Revision：1.0 Dec-2021 1/4 MMBT3904DC NPN Transistor Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit 40 -- 70 -- 100 300 at VCE = 1 V, IC = 50 mA 60 -- at VCE = 1 V, IC = 100 mA 30 -- ICBO -- 50 nA IEBO -- 50 nA V(BR)CBO 60 -- V V(BR)CEO 40 -- V V(BR)EBO 6 -- V VCE(sat) -- 0.2 V -- 0.3 0.65 0.85 -- 0.95 FT 300 -- MHz Cob -- 4 pF DC Current Gain at VCE = 1 V, IC = 0.1 mA at VCE = 1 V, IC = 1 mA at VCE = 1 V, IC = 10 mA Collector Base Cutoff Current at VCB = 30V Emitter Base Cutoff Current at VEB = 6 V Collector Base Breakdown Voltage at IC = 10 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 μA HFE -- Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA VBE(sat) at IC = 50 mA, IB = 5 mA Transition Frequency at VCE = 20 V, IC = 10 mA,f = 100 MHz Output Capacitance at VCB = 5 V, IE = 0, f = 1 MHz www.pingjingsemi.com Revision：1.0 Dec-2021 V 2/4 MMBT3904DC NPN Transistor DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) (V) Typical Characteristic Curves Collector Current IC (mA) Base-Emitter On Voltage VBE(on) (V) Base-Emitter Saturation Voltage VBE(sat) (V) Collector Current IC (mA) Collector Current IC (mA) Capacitance C （pF) Collector Base Cutoff Current ICBO (nA) Collector Current IC (mA) Reverse Bias Volatge VR (V) Common Emitter VCE = 1V Base-Emitter Voltage VBE (V) www.pingjingsemi.com Revision：1.0 Dec-2021 Power Dissipation PD (mW) Collector Current IC (mA) Ambient Temperature Ta (℃) Ambient Temperature Ta (℃) 3/4 MMBT3904DC NPN Transistor Package Outline DFN1x0.6-3L-0009 Dimensions in mm Ordering Information Device Package MMBT3904DC DFN1x0.6-3L www.pingjingsemi.com Revision：1.0 Dec-2021 Shipping 10,000PCS/Reel&7inches 4/4