MMBT3904T RSG

MMBT3904T Taiwan Semiconductor 60V, NPN General-Purpose Transistor FEATURES ● ● ● ● ● ● KEY PERFORMANCE PARAMETERS Complementary PNP Type: MMBT3906T Epitaxial Planar Type VCEO > 40V IC = 200mA Collector Current RoHS Compliant Halogen-free according to IEC 61249-2-21 VCE(sat) PARAMETER VALUE UNIT VCBO 60 V VCEO 40 V IC 200 mA 0.2 V IC = 10mA, IB = 1mA APPLICATION ● Consumer electronics ● Low frequency amplifier ● Driver SOT-523 Notes: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 200 mA Power Dissipation PD 150 mW Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C SYMBOL TYP UNIT RӨJA 397 THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance o C/W Thermal Performance Note: Units mounted on PCB (10mm x 5mm Cu pad test board) 1 Version: A2208 MMBT3904T Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT IC = 1.0mA, IB = 0A V(BR)CEO 40 - - V IC = 10μA, IE = 0A V(BR)CBO 60 - - V IE = 10μA, IC = 0A V(BR)EBO 6 - - V VCB = 30V, IE = 0A ICBO - - 50 nA VEB = 5V, IE = 0A IEBO - - 50 nA - - 0.2 V - - 0.3 V 0.65 - 0.85 V - - 0.95 V (1) Static Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation IC = 10mA, IB = 1.0mA VCE(sat) Voltage IC = 50mA, IB = 5.0mA Base-Emitter Saturation IC = 10mA, IB = 1.0mA Voltage IC = 50mA, IB = 5.0mA Output Capacitance VCB = 5.0V, IE = 0, f = 1MHz Cobo - - 4 pF Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz Cibo - - 8 pF IC = 0.1mA, VCE = 1.0V 40 - - IC = 1.0mA, VCE = 1.0V 70 - - 100 - 300 IC = 50mA, VCE = 1.0V 60 - - IC = 100mA, VCE = 1.0V 30 - - fT 300 - - MHz VCC = 3.0V, VBE(OFF) = -0.5V IC = 10mA, IB1 = 1.0mA td - - 35 ns tr - - 35 ns VCC = 3.0V,IC = 10mA IB1 = IB2 = 1.0mA ts - - 200 ns tf - - 50 ns DC Current Gain Dynamic VBE(sat) IC = 10mA, VCE = 1.0V hFE - (2) Transition Frequency Delay Time Rise Time Storage Time Fail Tome IC = 10mA, VCE = 20V, f = 100MHz Notes: 1. Pulse test: ≤380µs, duty cycle ≤2% 2. For DESIGN AID ONLY, not subject to production testing ORDERING INFORMATION ORDERING CODE PACKAGE PACKING MMBT3904T RSG SOT-523 3,000 / 7’’ Tape & Reel 2 Version: A2208 MMBT3904T Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Base-Emitter Saturation Voltage vs. Collector Current Fig.1 Collector-Emitter Saturation Voltage vs. Collector Current 1 VBE(SAT), BASE-EMITTER (V) SATURATION VOLTAGE VCE(SAT), COLLECTOR-EMITTER (V) SATURATION VOLTAGE 0.2 0.1 IC/IB =10 1 10 0.6 0.4 0.2 IC/IB =10 0 0 0.1 0.8 0.1 100 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Fig.3 DC Current Gain vs. Collector Current Fig.4 Input and Output Capacitance vs. Bias Voltage 12 1000 VCE=1V TJ=125°C CAPACITANCE (pF) 100 f=1MHz 10 TJ=25°C TJ=-55°C 8 Cibo 6 4 Cobo 2 0 10 0.1 1 10 100 0.1 1000 1 IC, COLLECTOR CURRENT (mA) 10 100 BIAS VOLTAGE (V) Fig.5 Collector Saturation Region 1 VCE, COLLECTOR EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 1 0.8 0.6 IC=1mA IC=10mA IC=100mA IC=30mA 0.4 0.2 0 1 10 100 1000 10000 IB, BASE CURRENT (mA) 3 Version: A2208 MMBT3904T Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS SOT-523 1.60±0.10 A 0.20 0.10 0.30±0.05 3 B 0.80±0.10 1.60±0.20 1 0.50 2 0.20±0.05 2X 0.10 C A B DETAIL A 3X 0.10 C 3X 0.90 0.70 0.80 0.70 C 8° 0° 0.45 0.20 (0.40) 0.60 0.50 C 0.10 0.00 SEATING PLANE DETAIL A (ROTATED -90°) 1.30 (SCALE 2:1) 0.60 0.40 0.50 3 SUGGESTED PAD LAYOUT P/N NOTES: UNLESS OTHERWISE SPECIFIED 1 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. 2 MARKING DIAGRAM 3. PACKAGE OUTLINE REFERENCE: EIAJ ED-7500A, SC-75. P/N = MARKING CODE 4 MOLDED PLASTIC BODY DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DWG NO. REF: HQ2SD07-SOT523-029 REV A. 4 Version: A2208 MMBT3904T Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: A2208