BAV23SE

BAV23 Series Silicon Epitaxial Planar Switching Diode SOT-23 Features  High voltage  Small package  Small capacitance Equivalent Circuit BAV23SE BAV23 BAV23CC Marking Code : BAV23 : JS BAV23SE : PY BAV23CC : PZ BAV23CA : RA BAV23CA 3.Cathode 3.Cathode1、Anode2 3.Cathode1、Cathode2 1.Anode 2.NC 1.Anode1 2.Cathode2 1.Anode1 2.Anode2 3.Anode1、Anode2 1.Cathode1 2.Cathode2 Absolute Maximum Ratings (TA=25℃) Parameter Symbol Value Unit VRRM 250 V VR 200 V Average Rectified Forward Current IF(AV) 400 mA Repetitive Peak Forward Current IFRM 625 mA Maximum Repetitive Reverse Voltage Reverse Voltage Non-repetitive Peak Forward Surge Current at t =10 ms at t =100 μs 1.7 IFSM at t =1 μs Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range www.pingjingsemi.com Revision：2.0 Jul-2021 3 A 9 PD 350 mW RθJA 357 °C/W TJ 150 °C TSTG -65 to +150 °C 1/4 BAV23 Series Silicon Epitaxial Planar Switching Diode Electrical Characteristics (TA=25℃) Parameter Symbol Min. Max. Unit VF -- 1 V -- 1.25 V(BR)R 250 -- V IR -- 0.1 μA -- 100 Cj -- 5 pF Trr -- 50 nS Forward Voltage at IF = 100 mA at IF = 200 mA Reverse Breakdown Voltage at IR = 100 µA Reverse Current at VR = 200 V, at TJ =25 °C at VR = 200 V, at TJ =150 °C Typical Junction Capacitance at VR= 0 V, f= 1 MHz Maximum Reverse Recovery Time at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω www.pingjingsemi.com Revision：2.0 Jul-2021 2/4 BAV23 Series Silicon Epitaxial Planar Switching Diode Leakage Current IR (μA) Instabtaneous Forward Current IF (mA) Typical Characteristic Curves Instabtaneous Forward Voltage VF (V) www.pingjingsemi.com Revision：2.0 Jul-2021 Junction Temperature TJ (℃) 3/4 BAV23 Series Silicon Epitaxial Planar Switching Diode Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping BAV23 Series SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：2.0 Jul-2021 4/4